Electron-bombarded back-illuminated CCD sensors for low-light-level imaging applications

Williams, G. M.; Rheinheimer, Alice L.; Aebi, Verle W.; Costello, Kenneth A.

doi:10.1117/12.206518

Cited by 12 publications

(6 citation statements)

References 2 publications

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“…, the photoelectron trajectories from the photocathode to the sensor over a small, typically ∼1 mm gap). The backscatter in our EB-sensor is small [ 20 ], and, in general, EB-sensors have better contrast and resolution compared to MCP intensified systems, where backscattering of electrons degrades the image quality [ 27 ].…”

Section: Eb-technologymentioning

confidence: 99%

“…Using a simple model, the gain of an EB-sensor is determined by [ 27 , 28 ]

where V is the potential difference between the cathode and the sensor,

is the threshold voltage, and W is the energy needed to create one electron-hole pair in the sensor. More detailed gain models have been devised, taking backscattered photoelectrons into account [ 27 ]. For silicon, W is ∼3.7 eV, depending on the local conditions [ 25 , 29 ].…”

Section: Eb-technologymentioning

confidence: 99%

“…They were originally developed for their high signal-to-noise ratio under low light levels [ 28 ] which was deemed a considerable advantage for astronomical applications [ 35 ]. EBCCDs were also developed for military night vision applications [ 27 ]. The first commercially available EBCCD was made by Hamamatsu in 2000, and offered 1024 × 2014 pixels, operating voltage of 6–8 kV and a 3 Hz maximum frame rate [ 36 ].…”

Section: Eb-technologymentioning

confidence: 99%

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Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

Hirvonen

Suhling

2016

Sensors

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Electron-bombarded pixel image sensors, where a single photoelectron is accelerated directly into a CCD or CMOS sensor, allow wide-field imaging at extremely low light levels as they are sensitive enough to detect single photons. This technology allows the detection of up to hundreds or thousands of photon events per frame, depending on the sensor size, and photon event centroiding can be employed to recover resolution lost in the detection process. Unlike photon events from electron-multiplying sensors, the photon events from electron-bombarded sensors have a narrow, acceleration-voltage-dependent pulse height distribution. Thus a gain voltage sweep during exposure in an electron-bombarded sensor could allow photon arrival time determination from the pulse height with sub-frame exposure time resolution. We give a brief overview of our work with electron-bombarded pixel image sensor technology and recent developments in this field for single photon counting imaging, and examples of some applications.

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Section: Eb-technologymentioning

confidence: 99%

“…Using a simple model, the gain of an EB-sensor is determined by [ 27 , 28 ]

where V is the potential difference between the cathode and the sensor,

Section: Eb-technologymentioning

confidence: 99%

Section: Eb-technologymentioning

confidence: 99%

See 1 more Smart Citation

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

Hirvonen

Suhling

2016

Sensors

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“…6 However, recently developed silicon and indium-gallium-arsenide FPA technology show promise as night vision imagers. 24,25 User feedback indicates that the combination of low frame rate, plus limited range gate, inhibits search and situation awareness. 22 That developmental system comes closest in size, weight, and range capability to the expected characteristics of the active/passive imager.…”

Section: Relationship To Existing Imager Technologiesmentioning

confidence: 99%

Solid state active/passive night vision imager using continuous-wave laser diodes and silicon focal plane arrays

Vollmerhausen

2013

Opt. Eng

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Passive imaging offers covertness and low power, while active imaging provides longer range target acquisition without the need for natural or external illumination. This paper describes a focal plane array (FPA) concept that has the low noise needed for state-of-the-art passive imaging and the high-speed gating needed for active imaging. The FPA is used with highly efficient but low-peak-power laser diodes to create a night vision imager that has the size, weight, and power attributes suitable for man-portable applications. Video output is provided in both the active and passive modes. In addition, the active mode is Class 1 eye safe and is not visible to the naked eye or to night vision goggles.

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“…A technological trend in image sensors has been the push to achieve single photon resolution, through increased signal gain and electronic noise reduction [1]. Photo-cathode based intensifier imaging technologies, electron bombarding (EBCCD or EBCMOS) and intensifiers (ICCD and ICMOS) first showed wide-field low-light imaging for night vision and scientific applications [2]. Three solid-state imaging technologies have attained deep sub-electron read noise (DSERN) that combined with high enough optical sensitivity, have an inherent capability of single photon resolution: the electron multiplying CCD (EMCCD), CMOS Single Photon Avalanche Diode (SPAD), and two CMOS image sensors (CIS) devices namely the Pinned Avalanche Photo Diode (PAPD) [3], and the pinned photo-diode (PPD) [4].…”

Section: Introductionmentioning

confidence: 99%

6.6 A 1280×720 single-photon-detecting image sensor with 100dB dynamic range using a sensitivity-boosting technique

Mori

Sakata

Usuda

et al. 2016

2016 IEEE International Solid-State Circuits Conference (ISSCC)

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SPAD cameras offer single photon detection sensitivity, high frame rates and zero readout noise. They are a core technology for widefield FLIM, but have further potential in ultra-fast imaging applications. However, in practice sensitivity falls behind that of EMCCD and sCMOS devices due to the lower photon detection efficiency of SPAD arrays. This paper considers the application of a binary SPAD camera to the capture of blinking molecules as part of a superresolution (dSTORM/PALM) experiment. Simulation and experimental studies demonstrate that the effective sensitivity of the camera can be improved significantly by aggregation of signal only binary frames. The simulations also indicate that with future advances in SPAD camera technology, SPAD devices could in time outperform existing scientific cameras when capturing fast temporal dynamics.

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Electron-bombarded back-illuminated CCD sensors for low-light-level imaging applications

Cited by 12 publications

References 2 publications

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

Photon Counting Imaging with an Electron-Bombarded Pixel Image Sensor

Solid state active/passive night vision imager using continuous-wave laser diodes and silicon focal plane arrays

6.6 A 1280×720 single-photon-detecting image sensor with 100dB dynamic range using a sensitivity-boosting technique

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