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Articles you may be interested inPlasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride Structural, optical, and electrical properties of hydrogenated amorphous silicon germanium alloysWe deposit hydrogenated amorphous silicon ͑a-Si:H͒ and hydrogenated amorphous silicon nitride (a-SiN x :H) films using dc reactive magnetron sputtering at 125 and 230°C substrate temperatures. We characterize the structural properties using infrared absorption, thermal hydrogen evolution, and refractive index measurements, and evaluate the electrical quality using capacitance-voltage and leakage current measurements. Nitride layers deposited at both temperatures have dominant N-H bonding with hydrogen concentration approximately 10 22 /cm 3 . Metal-insulator-semiconductor devices have been fabricated on c-Si and show electrical leakage of Ͻ 5 ϫ 10 Ϫ8 A/cm 2 at 3 MV/cm field, flat band voltage magnitude Ͻ 1 V, and hysteresis Ͻ 2 V. Low temperature a-Si:H films show monohydride dominant bonding. The photo-to dark conductivity ratio is 5 ϫ 10 5 for films deposited at 125°C. Inverted staggered thin film transistors have been fabricated with the optimized layers. Thin film transistors deposited at 230°C have a field effect mobility of 0.8 cm 2 /V s, an I on /I off ratio of 5 ϫ 10 5 , a subthreshold slope of 1.2 V/decade, and a threshold voltage of 4 V; those deposited at 125°C have a field effect mobility of 0.3 cm 2 /V s, an I on /I off ratio of 5 ϫ 10 5 , and a threshold voltage of 3 V.

This paper details the status of a program at Intevac ATD to develop high sensitivity transmission photocathodes which function in the 0.95 -1 .7 micron wavelength range. The goal of the program is to develop this technology for use with both imaging and non-imaging detectors. Sealed tube results are presented. Measured performance characteristics include: cathode spectral response, dark current, linearity and the effects of cooling. A brief discussion of planned development, potential applications and simple modeling illustrating the advantages of the proposed detectors are included.

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