Electron Channeling and Ion Channeling Contrast Imaging of Dislocations in Nitride Thin Films

Trager‐Cowan, C.; Sweeney, F.; Edwards, PR; Dynowski, FL; Wilkinson, Angus J.; Winkelmann, Aimo; Day, A. P.; Wang, T; Parbrook, P. J.; Watson, I. M.; Joy, DC

doi:10.1017/s1431927608086856

Cited by 2 publications

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“…6) also showed “dark line” features that are evidence of diffraction contrast from dislocations and other line defects in the crystals. This assumption is consistent with earlier observations that secondary electron images generated by the He + ion beam from crystalline materials display strong channeling contrast between grains, as well as from stacking faults and dislocation arrays (Bernheim, 1973; Trager-Cowan et al, 2008). This ability of the HIM to image crystal defects in both bulk and thin samples at high contrast and resolution will be of significant value in materials science.…”

Section: Resultssupporting

confidence: 92%

Diffraction Imaging in a He⁺ Ion Beam Scanning Transmission Microscope

et al. 2010

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The scanning helium ion microscope has been used in transmission mode to investigate both the feasibility of this approach and the utility of the signal content and the image information available. Operating at 40 keV the penetration of the ion beam, and the imaging resolution achieved, in MgO crystals was found to be in good agreement with values predicted by Monte Carlo modeling. The bright-field and annular dark-field signals displayed the anticipated contrasts associated with beam absorption and scattering. In addition, the diffraction of the He ion beam within the sample gave rise to crystallographic contrast effects in the form of thickness fringes and dislocation images. Scanning transmission He ion microscopy thus achieves useful sample penetration and provides nanometer scale resolution, high contrast images of crystalline materials and crystal defects even at modest beam energies.

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Section: Resultssupporting

confidence: 92%