Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Naresh-Kumar, G.; Mauder, C.; Wang, K. R.; Kraeusel, S.; Bruckbauer, Jochen; Edwards, P. R.; Hourahine, B.; Kalisch, H.; Vescan, A.; Giesen, C.; Heuken, M.; Trampert, A.; Day, A. P.; Trager-Cowan, C.

doi:10.1063/1.4801469

Cited by 17 publications

(9 citation statements)

References 39 publications

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“…This has been achieved in a range of single crystal materials, including GaN, [6][7][8][9] SiC, 10,11 GaSb, 1 and SrTiO 3 . 1 This focus on surface penetrating dislocations is due in part to the fact that the ECCI signal is provided by back-scattered electrons that elastically interacted with the material near the surface of a sample.…”

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confidence: 99%

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

Carnevale

Deitz

Carlin

et al. 2014

Applied Physics Letters

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Electron channeling contrast imaging (ECCI) is used to characterize misfit dislocations in heteroepitaxial layers of GaP grown on Si(100) substrates. Electron channeling patterns serve as a guide to tilt and rotate sample orientation so that imaging can occur under specific diffraction conditions. This leads to the selective contrast of misfit dislocations depending on imaging conditions, confirmed by dynamical simulations, similar to using standard invisibility criteria in transmission electron microscopy (TEM). The onset and evolution of misfit dislocations in GaP films with varying thicknesses (30 to 250 nm) are studied. This application simultaneously reveals interesting information about misfit dislocations in GaP/Si layers and demonstrates a specific measurement for which ECCI is preferable versus traditional plan-view TEM.

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confidence: 99%

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

Carnevale

Deitz

Carlin

et al. 2014

Applied Physics Letters

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“…To date, ECCI has predominantly been used to image features and defects near or at the sample surface for such functional materials as GaSb, 5 SrTiO 3 , 5 GaN, [6][7][8][9] and SiC. 10,11 This limitation is the result of the surface-sensitive nature of the ECCI signal itself, wherein the BSE that make up the signal come from a depth range of about 10 -100 nm.…”

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confidence: 99%

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Deitz

Carnevale

Ringel

et al. 2015

JoVE

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Misfit dislocations in heteroepitaxial layers of GaP grown on Si(001) substrates are characterized through use of electron channeling contrast imaging (ECCI) in a scanning electron microscope (SEM). ECCI allows for imaging of defects and crystallographic features under specific diffraction conditions, similar to that possible via plan-view transmission electron microscopy (PV-TEM). A particular advantage of the ECCI technique is that it requires little to no sample preparation, and indeed can use large area, as-produced samples, making it a considerably higher throughput characterization method than TEM. Similar to TEM, different diffraction conditions can be obtained with ECCI by tilting and rotating the sample in the SEM. This capability enables the selective imaging of specific defects, such as misfit dislocations at the GaP/Si interface, with high contrast levels, which are determined by the standard invisibility criteria. An example application of this technique is described wherein ECCI imaging is used to determine the critical thickness for dislocation nucleation for GaP-on-Si by imaging a range of samples with various GaP epilayer thicknesses. Examples of ECCI micrographs of additional defect types, including threading dislocations and a stacking fault, are provided as demonstration of its broad, TEM-like applicability. Ultimately, the combination of TEM-like capabilities - high spatial resolution and richness of microstructural data - with the convenience and speed of SEM, position ECCI as a powerful tool for the rapid characterization of crystalline materials.

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“…This enables us to unambiguously differentiate between screw, edge and mixed dislocations [3]. We have also demonstrated the use of ECCI to reveal and characterize basal plane stacking faults in nonpolar nitride semiconductors [4]. Comparing electron channeling contrast images with cathodoluminescence hyperspectral data from exactly the same micron-scale region of a sample is allowing us to investigate the influence of defects on the light emission [5].…”

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confidence: 99%

Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors

Trager‐Cowan¹,

Naresh-Kumar²,

Allehiani

et al. 2014

Microsc Microanal

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Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Cited by 17 publications

References 39 publications

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors

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