Electron cyclotron resonance plasma source for metalorganic chemical vapor deposition of silicon oxide films

Popov, O. E.; Shapoval, S. Yu.; Yoder, M. D.; Chumakov, A. A.

doi:10.1116/1.578872

Cited by 12 publications

(3 citation statements)

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“…According to the model the electron density reaches its maximum value for pressures of nearly 0.5 Pa. This trend is in agreement with the results obtained by other authors, such as Chung et al (1999) for inductively coupled discharges and Popov et al (1994) for ECR discharges. The electron densities predicted by the model are in agreement with the experimental measurements for similar discharges (Korzec et al 1996, Kiehlbauch andGraves 2003).…”

Section: Application Of the Global Model To An Oxygen Plasmasupporting

confidence: 91%

Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO₂thin films

Yanguas‐Gil¹,

Cotrino²,

González-Elipe³

2007

J. Phys. D: Appl. Phys.

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A global model for electronegative plasmas in a pressure range of 0.1–100 Pa is used to investigate the dissociation of the precursor in O2/SiCl(CH3)3 discharges. Microwave power is fed to the plasma by an annular waveguide ring with slotted line radiators on the inner side (SLAN) that is operated at 2.45 GHz. The modelling of the ECR plasma discharge and its application to the plasma enhanced chemical vapour deposition (PECVD) of silicon oxide films are reported. In the case of an oxygen discharge, theoretical values of the main plasma parameters (electron density and temperature and atomic oxygen population) are presented as a function of both pressure and electromagnetic power. The model results are compared with the experimental results obtained by optical emission spectroscopy, obtaining reasonably good agreement. The application of the model to the study of the PECVD of SiO2 film from O2/SiCl(CH3)3 mixtures has enabled us to determine that the fragmentation of the SiCl(CH3)3 molecule takes place mainly by electron impact dissociation, while the growth rate seems to be controlled by oxidation processes. Finally the influence of the precursor in the discharge has been studied. According to the model, in a first order approximation the insertion of the precursor causes an increase in the electron density due to the lower ionization threshold of the SiCl(CH3)3 molecule.

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Section: Application Of the Global Model To An Oxygen Plasmasupporting

confidence: 91%

Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO₂thin films

Yanguas‐Gil¹,

Cotrino²,

González-Elipe³

2007

J. Phys. D: Appl. Phys.

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“…AO produced by ECR plasma has been successfully used for processing high quality of thin films of semiconductor oxides [14][15][16], and depositing high-quality films of high T c superconductors [17]. The study and measurement of the density of AO, in ECR plasma, are important topics, since little is known about the AO concentration and its dependence on the plasma parameters in a typical ECR plasma source.…”

Section: Introductionmentioning

confidence: 99%

Characterization of atomic oxygen from an ECR plasma source

Naddaf

Bhoraskar

Mandale

et al. 2002

Plasma Sources Sci. Technol.

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A low-power microwave-assisted electron cyclotron resonance (ECR) plasma system is shown to be a powerful and effective source of atomic oxygen (AO) useful in material processing. A 2.45 GHz microwave source with maximum power of 600 W was launched into the cavity to generate the ECR plasma. A catalytic nickel probe was used to determine the density of AO. The density of AO is studied as a function of pressure and axial position of the probe in the plasma chamber. It was found to vary from ∼1 × 10 20 to ∼10 × 10 20 atom m −3 as the plasma pressure was varied from 0.8 to 10 mTorr. The effect of AO in oxidation of silver is investigated by gravimetric analysis. The stoichiometric properties of the oxide are studied using the x-ray photoelectron spectroscopy as well as energy dispersive x-ray analysis. The degradation of the silver surface due to sputtering effect was viewed by scanning electron spectroscopy. The sputtering yield of oxygen ions in the plasma is calculated using the TRIM code. The effects of plasma pressure and the distance from the ECR zone on the AO density were also investigated. The density of AO measured by oxidation of silver is in good agreement with results obtained from the catalytic nickel probe.

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“…E LECTRON-cyclotron-resonance (ECR) plasma reactors operate at high plasma densities ( cm ) and low neutral pressures ( Torr) and are being used for ultra large scale integration (ULSI) manufacturing as remote plasma sources for etching and thin-film deposition applications, [1]- [6]. Their high degree of ionization ( %) and concomitant high free-radical densities, combined with a plasma generation mechanism that is independent of substrate biasing, are of intrinsic advantage for submicron processing with high etch rates.…”

Section: Introductionmentioning

confidence: 99%

Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing

Friedmann

Shohet

Mau

et al. 1997

IEEE Trans. Semicond. Manufact.

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Abstract-In this work, the effects of plasma-parameter variations on charging damage to polysilicon-gate MOS capacitor test structures exposed to O 2 electron-cyclotron-resonance (ECR) plasmas are investigated. Results will show that charging damage is generated when large potential differences exist across the gate-oxide layers of the MOS capacitor test structures and that these potential differences can only occur in the presence of plasma nonuniformities. These results demonstrate the critical need for plasma uniformity during processing, in particular as device dimensions shrink and gate-oxide thicknesses decrease. The plasma parameters were varied by adjusting the neutral gas pressure and by independently biasing a circular grid and a ring electrode located above the wafer. The damage induced in the test wafers during the plasma exposure was characterized with ramp-voltage breakdown measurements. Radial profiles of the floating potential measured with a Langmuir probe were found to vary nonuniformly when the grid electrode was positively biased due to preferential depletion of electrons relative to ions beneath the grid electrode. An equivalent-circuit model of the test wafer and the wafer-stage electrode predicts that the silicon substrate acquires a potential equal to the average of the wafer surface potential. Comparisons of the calculated profiles of the potential difference across the gate-oxide layers of the test structures and whole-wafer maps of the breakdown-voltage measurements show that the majority of the damage occurs where the oxide potential difference is largest and that the damage only occurs in the presence of plasma nonuniformities.

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Electron cyclotron resonance plasma source for metalorganic chemical vapor deposition of silicon oxide films

Cited by 12 publications

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Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO₂thin films

Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO₂thin films

Characterization of atomic oxygen from an ECR plasma source

Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing

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Electron cyclotron resonance plasma source for metalorganic chemical vapor deposition of silicon oxide films

Cited by 12 publications

References 0 publications

Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO2thin films

Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO2thin films

Characterization of atomic oxygen from an ECR plasma source

Plasma-parameter dependence of thin-oxide damage from wafer charging during electron-cyclotron-resonance plasma processing

Contact Info

Product

Resources

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Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO₂thin films

Global model of a low pressure ECR microwave plasma applied to the PECVD of SiO₂thin films