Electron Cyclotron Resonance Plasma Sources

Stevens, J.

doi:10.1016/b978-081551377-3.50009-8

Cited by 17 publications

(17 citation statements)

References 131 publications

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“…As expected, an increase in the microwave power has a very small effect on the actual sheath potential. 13 Together with the trends, shown in Fig. 1, we find that increased microwave power increases the ion current directly without increasing the sheath potential, which is consistent with Refs.…”

Section: Microwave Power Variationssupporting

confidence: 89%

“…This observation is consistent with that in Ref. 13. In remotelike ECR plasmas, our working distance is 25.3 cm from the sample; the microwave power should have a direct affect on ionization with the DC bias having a much smaller role.…”

Section: Bias Variationssupporting

confidence: 89%

“…This increase is consistent with the literature in that the greater the microwave power, the greater the amount of ionization that occurs. 13 Over the range of 250-450 W, increasing power does not increase the ion density. The power is still being absorbed and therefore changing the plasma; however, it is not creating further ionization.…”

Section: Microwave Power Variationsmentioning

confidence: 98%

“…However, the DC bias input can greatly affect the plasma sheath allowing a greater sheath potential and therefore ion current; this is also consistent with the literature. 13,16 The ion current is not the only parameter affected by the DC biasing. As shown in Fig.…”

Section: Bias Variationsmentioning

confidence: 99%

“…13,14 We first examined variations in microwave power. Figure 1 shows the ion density and the ion current per area (the surface area of the probe) as a function of microwave input power.…”

Section: Microwave Power Variationsmentioning

confidence: 99%

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A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas

Stoltz

Sperry

Benson

et al. 2005

Journal of Elec Materi

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We report on the physical attributes of an argon-hydrogen plasma and the effects that induced changes in these attributes have on the physical and electrical characteristics of the plasma itself. Changes in the plasma conditions of these argon-hydrogen plasmas due to variations in microwave power, DC biasing, gas concentrations, and pressures were measured. We determined that increasing the hydrogen flow increases the sheath potential of the plasma, thereby increasing the arrival energy of ions at the surface of a sample placed in the plasma. Even with the decrease in plasma density from an increase in hydrogen input flow, we found the ion current is maintained in the predominately hydrogen plasma and is likely compensated by the high velocity and long mean free path of the hydrogen. We also observed that increasing total pressure also results in hydrogen ions dominating the total number of ions reaching the Langmuir probe and therefore the sample during processing. Last, a model based on the ion/electron energy ratio was developed and used to determine the relative ion concentrations of hydrogen and argon ions.

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Section: Microwave Power Variationssupporting

confidence: 89%

Section: Bias Variationssupporting

confidence: 89%

Section: Microwave Power Variationsmentioning

confidence: 98%

Section: Bias Variationsmentioning

confidence: 99%

“…13,14 We first examined variations in microwave power. Figure 1 shows the ion density and the ion current per area (the surface area of the probe) as a function of microwave input power.…”

Section: Microwave Power Variationsmentioning

confidence: 99%

See 3 more Smart Citations

A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas

Stoltz

Sperry

Benson

et al. 2005

Journal of Elec Materi

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Modeling and Experimental Study of a Remote Microwave Plasma Source for High‐Rate Etching

Pauly

Schulz

Walker

et al. 2022

Chemie Ingenieur Technik

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This study aimed to investigate and optimize a remote microwave plasma source (RMPS) concerning the etching rate, the etching rate distribution, and to simplify its setup to save production costs. A finite element method (FEM) based model of the RMPS was developed to investigate microwave coupling into the plasma chamber and microwave field distribution. The simulations at ignition conditions were compared with the calculated electric field distribution and the experimentally determined electric field. The simulations at operating conditions were validated visually through photographs of the plasma. Also, the etching depth on polymethylmethacrylate (PMMA) substrates was measured with a contact profilometer and normalized with etching time to etching rate.

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Plasma-based processes and thin film equipment for nano-scale device fabrication

Peng

Matthews

Chi³

2010

J Mater Sci

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Electron Cyclotron Resonance Plasma Sources

Cited by 17 publications

References 131 publications

A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas

A langmuir probe investigation of electron cyclotron resonance argon-hydrogen plasmas

Modeling and Experimental Study of a Remote Microwave Plasma Source for High‐Rate Etching

Plasma-based processes and thin film equipment for nano-scale device fabrication

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