Abstract. We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the ptype high mobility silicon quantum well (Si-QW) confined by the δ -barriers heavily doped with boron. The ESR studies show that the δ -barriers appear to consist of the trigonal dipole centers, B + -B -, which are caused by the negative-U reconstruction of the shallow boron acceptors, 2B 0 → B + + B -. The temperature and magnetic field dependencies of the resistance, thermo-emf, specific heat and magnetic susceptibility demonstrate that the high temperature superconductivity observed seems to result from the transfer of the small hole bipolarons through these negative-U dipole centers of boron at the Si-QW -δ-barrier interfaces. The value of the superconductor energy gap obtained is in a good agreement with the data derived from the oscillations of the conductance in normal state and of the zero-resistance supercurrent in superconductor state as a function of the bias voltage. These oscillations appear to be correlated by on-and off-resonance tuning the two-dimensional subbands of holes with the Fermi energy in the superconductor δ-barriers. Finally, the proximity effect in the S-Si-QW-S structure is revealed by the findings of the multiple Andreev reflection (MAR) processes and the quantization of the supercurrent.