Superconductor Properties for Silicon Nanostructures

Klyachkin, L. E.; Malyarenko, A. M.; Bagraev, N. T.; Koudryavtsev, A. A.; Romanov, V. V.

doi:10.5772/10119

Cited by 4 publications

References 55 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

DNA detection by THz pumping

Chernev¹,

Bagraev²,

Klyachkin³

et al. 2016

2016 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

View full text Add to dashboard Cite

Prompt detection of oligonucleotides with semiconductor devices is a technique that is believed to be capable of improving all current genetics technologies 1 . Almost every detection method requires the use of fluorescent dyes and markers 2-5 for the indirect measurements of the nucleic acids' characteristics. The development of pH sensing has provided a significant improvement to the field of label-free, real-time, and non-optical semiconductor sequencing 6 and amplification 7 . Another promising conception is singlemolecule nanopore analysis [8][9][10] . However, a superior method for oligonucleotide detection has yet to be developed. Here, we demonstrate that synthetic oligonucleotides can be directly detected without labels by their self-resonant modes with silicon nanosandwich pump device. The self-resonant modes of oligonucleotides are identified not only by Raman spectroscopy 11,12 , but also with a silicon nanosandwich-based pump device that provides both the excitation of the oligonucleotides' self-resonant modes and feedback for currentvoltage measurements. Our results demonstrate a new method for label-free, real-time oligonucleotide characterisation by their self-resonant modes, which are unique to their conformation and sequence. We anticipate that our assay will be used as a starting point for a more detailed investigation of the aforementioned mechanism, which can be used as a basis for oligonucleotide detection and analysis. Furthermore, this technique can be applied to improve existing modern genetics technologies.The real-time amplification and detection of nucleic acids has given rise to the development of life science research and molecular diagnostics 2,3,5 . These methods are now a basis of the techniques applied for the express detection and quantification of small amounts of nucleic acids and have a wide array of applications [2][3][4][5] . However, use of these techniques for the real-time detection of nucleic acids requires precision optics as well as fluorescently labelled, sequence-specific probes or fluorescent dyes for DNA labelling 3,5 . These requirements represent a significant disadvantage of such techniques because of the need to collect oligonucleotide signals indirectly. Several attempts have been made to resolve this issue. Recently, a semiconductor-based nucleic acid sequencer that uses the pH-sensing capability of ion-sensitive field-effect transistors (ISFET) has been demonstrated 6 . Another device that is capable of amplifying and detecting DNA simultaneously using embedded heaters, temperature sensors, and ISFET sensor arrays also appears to be highly effective 7 . The most important result of the studies mentioned was to simultaneously provide amplification and detection. Nevertheless, despite the development of ISFET technology [13][14][15][16] , there are still challenges that it cannot address. The most crucial disadvantage of ISFET-based sensors is that they are based on a pHsensing mechanism that is not target specific.Here, we present a new method of oligonucle...

show abstract

DNA detection by THz pumping

Chernev¹,

Bagraev²,

Klyachkin³

et al. 2016

2016 41st International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

View full text Add to dashboard Cite

show abstract

Quantum conductance staircase of holes in silicon nanosandwiches

Bagraev

Klyachkin

Malyarenko

et al. 2019

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

View full text Add to dashboard Cite

The results of studying the quantum conductance staircase of holes in one−dimensional channels obtained by the split−gate method inside silicon nanosandwiches that are the ultra−narrow quantum well confined by the delta barriers heavily doped with boron on the n−type Si (100) surface are reported. Since the silicon quantum wells studied are ultra−narrow (~2 nm) and confined by the delta barriers that consist of the negative−U dipole boron centers, the quantized conductance of one−dimensional channels is observed at relatively high temperatures (T > 77 K). Further, the current−voltage characteristic of the quantum conductance staircase is studied in relation to the kinetic energy of holes and their sheet density in the quantum wells. The results show that the quantum conductance staircase of holes in p−Si quantum wires is caused by independent contributions of the one−dimensional (1D) subbands of the heavy and light holes; these contributions manifest themselves in the study of square−section quantum wires in the doubling of the quantum−step height (G0 = 4e2/h), except for the first step (G0 = 2e2/h) due to the absence of degeneracy of the lower 1D subband. An analysis of the heights of the first and second quantum steps indicates that there is a spontaneous spin polarization of the heavy and light holes, which emphasizes the very important role of exchange interaction in the processes of 1D transport of individual charge carriers. In addition, the field−related inhibition of the quantum conductance staircase is demonstrated in the situation when the energy of the field−induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split−gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of holes is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. In the concluding section of this paper we present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the silicon nanosandwiches prepared within frameworks of the Hall. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional forms of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

show abstract