Electron-doped colossal magnetoresistance in the sintered<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>La</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">T</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>MnO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>lanthanum-deficient phase

Chou, Hsiung; Wu, Chia-Hung; Hsu, S. G.; Wu, Chunfang

doi:10.1103/physrevb.74.174405

Cited by 17 publications

(8 citation statements)

References 39 publications

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“…This is in agreement with the estimated Ce doping level from the EDS data, which is consistent with the limited solubility of Ce into the parent LaMnO 3 phase. 61,62 On the other hand, the reported solubility of La in CeO 2 is very high. 58 This explains our observed Ce doping level in LBMO being lower than the level of La in CeO 2 .…”

Section: Resultsmentioning

confidence: 99%

Achieving ferromagnetic insulating properties in La_0.9Ba_0.1MnO₃ thin films through nanoengineering

Cui

Choi

et al. 2020

Nanoscale

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Section: Resultsmentioning

confidence: 99%

Achieving ferromagnetic insulating properties in La_0.9Ba_0.1MnO₃ thin films through nanoengineering

Cui

Choi

et al. 2020

Nanoscale

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“…For many years, some researchers attempt to substitute tetravalent ions like Ce 4þ , Te 4þ , Sn 4þ , Sb 4þ , and Pb 4þ at the La site in order to gain electron-doped manganites. 8,[15][16][17][18][19][20][21] It is generally believed that the electron-doped manganites exhibit CMR effect via the double exchange (DE) between the Mn 3þ -Mn 2þ ions, instead of DE between Mn 3þ -Mn 4þ ions in holedoped compounds. This stimulates the hopes of manufacturing all manganites p-n junctions and spintronic devices in the near future.…”

Section: Introductionmentioning

confidence: 99%

Magnetic field mediated low-temperature resistivity upturn in electron-doped La1−xHfxMnO3 manganite oxides

Guo

Wang

et al. 2012

Journal of Applied Physics

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The low-temperature transport properties were systematically studied on the electron-doped polycrystalline La 1Àx Hf x MnO 3 (x ¼ 0.2 and 0.3) compounds at the presence of external magnetic fields. The resistivity of all samples exhibits a generally low-temperature resistance upturn behavior under zero magnetic field at the temperature of T min , which first shifts towards lower temperature at low magnetic field (H < 0.75 T) and then moves back to higher temperature as magnetic fields increase, which is greatly different with the previous results on the hole-doped manganites. The best fitting of low-temperature resistivity could be made by considering both electron-electron (e-e) interactions in terms of T 1/2 dependence and Kondo-like spin dependent scattering in terms of lnT dependence at all magnetic fields. Our results will be meaningful to understand the underlying physical mechanism of low-temperature resistivity minimum behavior in the electron-doped manganites. V

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“…In some recent studies electron-doped manganites such as LaCeMnO 3 and LaTeMnO 3 have been investigated [5,6]. Several reports on the electron-doped manganite studies have suggested the formation of mixed phases in these systems [7,8].…”

Section: Introductionmentioning

confidence: 98%

Effect of Pr doping in La–Sn–Mn–O system

Kumar

Tripathi

Dogra

et al. 2010

Journal of Alloys and Compounds

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Electron-doped colossal magnetoresistance in the sinteredLa1−xTxMnO3lanthanum-deficient phase

Cited by 17 publications

References 39 publications

Achieving ferromagnetic insulating properties in La_0.9Ba_0.1MnO₃ thin films through nanoengineering

Achieving ferromagnetic insulating properties in La_0.9Ba_0.1MnO₃ thin films through nanoengineering

Magnetic field mediated low-temperature resistivity upturn in electron-doped La1−xHfxMnO3 manganite oxides

Effect of Pr doping in La–Sn–Mn–O system

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Electron-doped colossal magnetoresistance in the sinteredLa1−xTxMnO3lanthanum-deficient phase

Cited by 17 publications

References 39 publications

Achieving ferromagnetic insulating properties in La0.9Ba0.1MnO3 thin films through nanoengineering

Achieving ferromagnetic insulating properties in La0.9Ba0.1MnO3 thin films through nanoengineering

Magnetic field mediated low-temperature resistivity upturn in electron-doped La1−xHfxMnO3 manganite oxides

Effect of Pr doping in La–Sn–Mn–O system

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Product

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About

Achieving ferromagnetic insulating properties in La_0.9Ba_0.1MnO₃ thin films through nanoengineering

Achieving ferromagnetic insulating properties in La_0.9Ba_0.1MnO₃ thin films through nanoengineering