Electron Doping Effect in the Resistive Switching Properties of Al/Gd_1–xCa_xMnO₃/Au Memristor Devices

Abstract

We report on the resistive switching (RS) properties of Al/Gd 1– x Ca x MnO 3 (GCMO)/Au thin-film memristors. The devices were studied over the whole calcium substitution range x as a function of electrical field and temperature. The RS properties were found to be highly dependent on the Ca substitution. The optimal concentration was determined to be near x = 0.9, which is higher than the values reported for other similar manganite-based devices. We utilize an equivalent circuit model which accounts for the obtained results and allows us to determine that the electrical conduction properties of the devices are dominated by the Poole–Frenkel conduction mechanism for all compositions. The model also shows that lower trap energy values are associated with better RS properties. Our results indicate that the main RS properties of Al/GCMO/Au devices are comparable to those of other similar manganite-based materials, but there are marked differences in the switching behavior, which encourage further exploration of mixed-valence perovskite manganites for RS applications.

Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices

“…The devices investigated are Al/Gd 0.1 Ca 0.9 MnO 3 (80 nm)/Au structures deposited on SrTiO 3 (STO) substrates by pulsed laser deposition (λ=308 nm from a XeCl-laser) [8]. The pulse duration was 25 ns (1500 pulses), with a repetition rate of 5 Hz, laser fluence of 2 J/cm 2 , and oxygen pressure of 0.175 Torr.…”

“…letter, we focus the attention on GCMO devices with x=0.9, which has been demonstrated to provide the highest resistance window [8]. It has also been observed that the Au and Al electrodes are associated with ohmic and rectifying contacts with the GCMO layer, respectively [8]. The devices exhibit asymmetrical switching voltages (Fig.…”

Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices

“…We associate I 1 , I 2 , and I 3 with tunneling, Schottky-like, and soft-breakdown conduction, respectively [7][8][9][10][11][12]. Poole-Frenkel conduction is also a possibility which cannot be ruled out [8].  i , I 0i , and R i , i=1,2,3 are fitting parameters.…”

Impact of Top Electrodes (Cu, Ag, and Al) on Resistive Switching behaviour of Cu‐rich Cu2ZnSnS4(CZTS) Ideal Kesterite

“…However, the potential use of these modern technologies is still facing issues, such as low data storage capacity, large power consumption, and low packing density, which need to be addressed [1,2] . Resistive memory devices are emerging as the cost‐effective alternative to overcome these challenges in modern technologies and capable of storing large data with better stability [3,4] . The first ever thin‐film based memory was proposed in 1963 by Cheng et al [2,5] .…”