Electron drift mobility in a Si-Ge1−xSi

High field transport in strained Si/GeSi double heterostructure: A Fokker–Planck approach

“…As it was said before, size quantization is of relevance when the carrier energies are low enough (this is the case of low field transport as discussed in Ref. [11]), but for the high carrier energies involved in high field transport, size quantization becomes irrelevant. In the revised literature we have not found available experimental data for this kind of system.…”

“…More recently, hole transport parameters have been analyzed for this type of systems [10]. While the electronic transport properties of low field, low temperature Si/GeSi heterostructures are more or less well understood [11], the situation is not the same for high electric fields. For high field transport, the effects of size quantization are usually negligible and we can work within three dimensional models for the valley structure.…”

Si/SiGe Quantum‐Well Electron Mobility. Main Scattering Mechanisms

“…Hence, the Fermi energy F, calculated by the formula given in the Appendix, is F = 2.8 meV, an energy lying between El and E , and thus ensuring the SQL for the temperature range assumed in this work (for our conditions we get El = 1.023 meV and E , = 4.09 mew. As in [7,8] the theoretical result was fitted to the experimental curve of [9] introducing the fitting parameter p. We have thus taken where 3 is the DP energy, Q the Si mass density, and s, the longitudinal sound velocity in Si. For bulk Si all these quantities are reported in [18, 191. For Nsb, the remote Sb impurity concentration, and for N,, the background impurity concentration, [9] does not provide defined values.…”