Electron-Drift Mobility in Single-Crystal HgS

Tabak, M.

doi:10.1063/1.1655873

Cited by 15 publications

(1 citation statement)

References 5 publications

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“…8 An electron mobility of 45 cm 2 /V-sec has been reported for α-HgS in literature 9 and resistivity of up to 10 12 has been measured. 10 The reported value of Mohs hardness for α-HgS is 2.5, which is comparable to that for CdTe and CZT (with Mohs' hardness in 2.3-2.9 range). Elemental analysis performed by GDMS on one of the cinnabar samples gave the results shown in Figure 4.…”

Section: Properties Of Cinnabar (Hgs)supporting

confidence: 59%

HgS: a rugged, stable semiconductor radiation detector material

et al. 2009

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Many materials used in radiation detectors are environmentally unstable and/or fragile. These properties are frustrating to researchers and add significantly to the time and cost of developing new detectors as well as to the cost of manufacturing products. The work presented here investigates the properties of HgS. This material was selected for study based partly on its inherent stability and ruggedness, high density, high atomic number, and bandgap. HgS is found in nature as the mineral cinnabar. A discussion of the physical properties of HgS, experimental characterization of natural cinnabar, and initial radiation detection results are presented along with a discussion of potential crystal growth techniques for producing crystals of HgS in the laboratory.

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Section: Properties Of Cinnabar (Hgs)supporting

confidence: 59%

HgS: a rugged, stable semiconductor radiation detector material

et al. 2009

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Time‐of‐Flight Transient Photoconductivity Technique

Kasap

2022

Photoconductivity and Photoconductive Materials

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Effet photo Hall du cinabre

Butti¹,

Raymond²,

Bombré³

1976

Phys. Stat. Sol. (a)

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Trigonales HgS ist ein Halbleiter mit großem Bandabstand, der eine niedrige Zweifach‐Koordinationssymmetriestruktur besitzt, die höchst ungewöhnlich ist unter den II–VI‐Verbindungen. Die Photo‐Hallbeweglichkeit der Majoritätsträger wird bei Zimmertemperatur und bei 77 K für zwei Typen von Kristallen, natürliche aus Spanien und synthetische, im Labor präparierte, untersucht. Die Experimente zeigen, daß eine starke Anisotropie der Beweglichkeit existiert, wobei die höhere Beweglichkeit mit einem Transport parallel zur trigonalen Achse korrespondiert, die die Richtung hoher Leitfähigkeit darstellt.

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Electron-Drift Mobility in Single-Crystal HgS

Cited by 15 publications

References 5 publications

HgS: a rugged, stable semiconductor radiation detector material

HgS: a rugged, stable semiconductor radiation detector material

Time‐of‐Flight Transient Photoconductivity Technique

Effet photo Hall du cinabre

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