Electron–electron interaction in Multiple Quantum Wells

Zybert, M.; Marchewka, M.; Tomaka, G.; Sheregii, E. M.

doi:10.1016/j.physe.2012.06.010

Cited by 3 publications

(4 citation statements)

References 32 publications

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“…The well thickness was about 10 nm while the width of barriers was about 5 nm. Magneto-transport measurements 33 λ 1 = 9.69 µm at three temperatures (6 K, 70 K and 300 K) are presented in Fig. 1 a, b, and c, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…This problem specifically concerns the MQWs based on the GaAs/AlGaAs heterostructures where the donor centers can exist both in the wells and barriers. In addition to the useful applications of MQWs to infrared photodetectors [14][15][16][17] , light-emitting diode array (emitters) [18][19][20][21] and cascade lasers [22][23][24][25] , nonlinear optics 26 , phononic crystals 27 they provide a test system for the study of electron correlation in two dimensional electron gas (2DEG) when the electrons are spatially conned by the potentials of closely spaced multilayers [28][29][30][31][32][33][34][35] .…”

Section: Introductionmentioning

confidence: 99%

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Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

et al. 2017

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Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6 to 300 K. The 14 × 14 P•p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magneto-donor states in the GaAs wells and possibly in the AlGaAs barriers. The magneto-donor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed magneto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

et al. 2017

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“…The well thickness was 18 atomic layers (AL, about 10 nm) while the width of barriers was 9 AL (about 5 nm). Magneto-transport measurements 30 K) are presented in Fig. 1.…”

Section: Resultsmentioning

confidence: 99%

“…This problem is connected with MQWs where the donor centers can exist both in the wells and barriers. In addition to the useful applications of MQWs to infrared photo-detectors [14][15][16][17] , light emitters [18][19][20] and cascade lasers [21][22][23][24] , they provide a test system for the study of electron correlation when the electrons are spatially confined by the potentials of closely spaced multilayers [25][26][27][28][29][30] .…”

Section: Introductionmentioning

confidence: 99%

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at mega-gauss magnetic fields

Zybert

Marchweka

Sheregii

et al. 2017

Self Cite

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Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated by means of the cyclotron resonance at mega-gauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6 to 300 K. The 14 × 14 P·p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magneto-donor states in the GaAs wells and possibly in the AlGaAs barriers. The magneto-donor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed magneto-optical transitions in MQWs in the middle infrared region. Our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

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Effect of wells thicknesses disorder on quantum magneto-transport properties in GaAs/AlxGa1-xAs multi-quantum wells near wavelength infrared detectors

Melkoud

Nafidi

Barkissy

2022

Micro and Nanostructures

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Electron–electron interaction in Multiple Quantum Wells

Cited by 3 publications

References 32 publications

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at mega-gauss magnetic fields

Effect of wells thicknesses disorder on quantum magneto-transport properties in GaAs/AlxGa1-xAs multi-quantum wells near wavelength infrared detectors

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