Electron-electron interactions in the conductivity of graphene

Kozikov, Aleksey; Savchenko, A. K.; Narozhny, B. N.; Shytov, A. V.

doi:10.1103/physrevb.82.075424

Cited by 80 publications

(107 citation statements)

References 29 publications

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“…The value for F 0 is found to be in the range F 0 % À0:066 for S1 and F 0 % À0:085 for S2. This value is comparable to À0:13 < F 0 < À0:08 obtained previously for flakes [23] and its low magnitude has been explained as a consequence of chiral carriers, which reduces the angle for electron-electron scattering. In summary, we presented a comprehensive analysis of two quantum transport phenomena in epitaxial graphene grown on the Si-terminated face of SiC-the AronovAltshuler e À e interaction correction and WL contribution to resistivity.…”

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Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements

et al. 2011

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We have performed magnetotransport measurements on monolayer epitaxial graphene and analyzed them in the framework of the disordered Fermi liquid theory. We have separated the electron-electron and weak-localization contributions to resistivity and demonstrated the phase coherence over a micrometer length scale, setting the limit of at least 50 ps on the spin relaxation time in this material.Funding Agencies|Swedish Research Council||Foundation for Strategic Research||UK National Measurement Office||EU|

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confidence: 64%

“…[11,23]. The temperature dependence of the WLcorrected conductivity for the two samples, Á xx ¼ xx ðTÞ À xx ðT ¼ 2 KÞ (Fig.…”

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Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements

et al. 2011

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“…The use of full, dynamically screened Coulomb interaction ensured that all plasmon-related features were taken into account automatically. Choosing realistic values (Kozikov et al, 2010;Peres et al, 2011) for the effective coupling constant, the only fitting parameter in this calculation was the impurity scattering time τ , which was taken to be energy-independent similarly to the above discussion. Such calculation was also able to reproduce the data (Ponomarenko, 2013) in the doped regime.…”

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confidence: 99%

“…The effective interaction parameter was estimated by the most plausible value for graphene on hBN, α g ≈ 0.2 [see e.g. Kozikov et al (2010) and Reed et al (2010) for general considerations and the experimental evidence for possible values of α g ].…”

Section: E Hall Drag In Graphenementioning

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Coulomb drag

2016

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Coulomb drag is a transport phenomenon whereby long-range Coulomb interaction between charge carriers in two closely spaced but electrically isolated conductors induces a voltage (or, in a closed circuit, a current) in one of the conductors when an electrical current is passed through the other. The magnitude of the effect depends on the exact nature of the charge carriers and microscopic, many-body structure of the electronic systems in the two conductors. Drag measurements have become part of the standard toolbox in condensed matter physics that can be used to study fundamental properties of diverse physical systems including semiconductor heterostructures, graphene, quantum wires, quantum dots, and optical cavities.

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Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

et al. 2017

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2Weak localization (WL) and weak antilocalization (WAL) are quantum interference effects [1][2][3][4] resulting from electron phase coherence and spin-orbit interactions in 2-dimensional (2D) electron systems. WL results from constructive interference between pairs of time-reversed closed-loop electron trajectories and provides a positive correction to the Drude resistivity. [2, 4] Spin-orbit coupling (SOC) leads to suppressed backscattering due to destructive interference, leading to WAL and a negative correction to the Drude resistivity.[3]The intrinsic SOC of graphene is weak; [5] however, charge carriers in graphene possess a pseudospin degree of freedom, which arises from the degeneracy introduced by the two inequivalent atomic sites per unit cell in the graphene honeycomb lattice being comprised of A and B sublattices[ Figure 1(a) and (b)]. [6, 7] Recent discovery of unique quantum transport phenomena in graphene, such as unconventional half-integer quantum Hall effect [7, 8] and Klein tunneling [9][10][11] is a direct consequence of non-trivial Berry phase of ! induced by pseudospin rotation. Pseudospin in graphene can be utilized to store and manipulate information, which is analogous to the spin degree of freedom in spintronics. [12][13][14][15][16] Because of pseudospin rotation, each scattering process has a phase difference of ! between two time reversal pair in a closed quantum diffusive path. This results in destructive interference that suppresses backscattering, leading to WAL in graphene, which is analogous to the role of SOC (Figure 1(c) and (d)) in ordinary semiconductors. WAL is theoretically expected in graphene in the absence of inter-valley and chirality breaking scattering. [17] Most studies have not presented clear evidence of WAL via negative magnetoconductance, [18][19][20][21][22] most likely due to presence of point defects in graphene samples that locally break the sublattice degeneracy and smooth out !-phase contribution. Experimental signatures of WAL observed in high-quality epitaxial graphene samples are attributed to suppressed point defects.[23]Interestingly, a WL to WAL transition is achieved in high quality exfoliated samples [24] by decreasing the ratio of the dephasing length to the symmetry-breaking length via decoherence and carrier-density control. 3Preservation of pseudospin quantum interference up to room temperature (RT) is of fundamental importance for a variety of proposed applications, [12-16, 25, 26] but thermal perturbations typically suppress the phase coherence and hinder practical use of the devices. RT operation can be achieved if the high graphene mobility is consistently maintained over a broad temperature range and phonon-scattering contribution is significantly reduced. The mobility of graphene field-effect devices fabricated on SiO 2 /Si substrates is typically reduced at RT due to scattering with surface polar modes. [20,27,28] A significant improvement in quality was achieved by fabricating graphene devices on hexagonal-boron nitride (hBN) ...

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Electron-electron interactions in the conductivity of graphene

Cited by 80 publications

References 29 publications

Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements

Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements

Coulomb drag

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures

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Electron-electron interactions in the conductivity of graphene

Cited by 80 publications

References 29 publications

Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements

Disordered Fermi Liquid in Epitaxial Graphene from Quantum Transport Measurements

Coulomb drag

Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO3/SrTiO3 Heterostructures

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Room‐Temperature Quantum Transport Signatures in Graphene/LaAlO₃/SrTiO₃ Heterostructures