We have measured the terahertz frequency-dependent sheet conductivity and its transient response following femtosecond optical excitation for single-layer graphene samples grown by chemical vapor deposition. The conductivity of the unexcited graphene sheet, which was spontaneously doped, showed a strong free-carrier response. The THz conductivity matched a Drude model over the available THz spectral range and yielded an average carrier scattering time of 70 fs. Upon photoexcitation, we observed a transient decrease in graphene conductivity. The THz frequency-dependence of the graphene photoresponse differs from that of the unexcited material but remains compatible with a Drude form. We show that the negative photoconductive response arises from an increase in the carrier scattering rate, with a minor offsetting increase in the Drude weight. This behavior, which differs in sign from that reported previously for epitaxial graphene, is expected for samples with relatively high mobilities and doping levels. The photoinduced conductivity transient has a picosecond lifetime and is associated with nonequilibrium excitation conditions in the graphene.

Following graphene growth by thermal decomposition of ethylene on Ir(111) at high temperatures we analyzed the strain state and the wrinkle formation kinetics as function of temperature. Using the moiré spot separation in a low energy electron diffraction pattern as a magnifying mechanism for the difference in the lattice parameters between Ir and graphene, we achieved an unrivaled relative precision of ±0.1 pm for the graphene lattice parameter. Our data reveals a characteristic hysteresis of the graphene lattice parameter that is explained by the interplay of reversible wrinkle formation and film strain. We show that graphene on Ir(111) always exhibits residual compressive strain at room temperature. Our results provide important guidelines for strategies to avoid wrinkling.

International audienceThe morphology of graphene monolayers on Ir(111) prepared by thermal decomposition of ethylene between 1000 and 1530 K was studied with high resolution low energy electron diffraction. In addition to a well-oriented epitaxial phase, randomly oriented domains are observed for growth temperatures between 1255 and 1460 K. For rotational angles of ±3° around 30° these domains lock-in in a 30° oriented epitaxial phase. Below 1200 K the graphene layer exhibits high disorder and structural disintegrity. Above 1500 K the clear moiré spots reflect graphene in a single orientation epitaxial incommensurate phase

We examine charge transfer interactions in the hybrid system of a film of C60 molecules deposited on single-layer graphene using Raman spectroscopy and Terahertz (THz) time-domain spectroscopy. In the absence of photoexcitation, we find that the C60 molecules in the deposited film act as electron acceptors for graphene, yielding increased hole doping in the graphene layer. Hole doping of the graphene film by a uniform C60 film at a level of 5.6 × 10(12)/cm(2) or 0.04 holes per interfacial C60 molecule was determined by the use of both Raman and THz spectroscopy. We also investigate transient charge transfer occurring upon photoexcitation by femtosecond laser pulses with a photon energy of 3.1 eV. The C60/graphene hybrid exhibits a short-lived (ps) decrease in THz conductivity, followed by a long-lived increase in conductivity. The initial negative photoconductivity transient, which decays within 2 ps, reflects the intrinsic photoresponse of graphene. The longer-lived positive conductivity transient, with a lifetime on the order of 100 ps, is attributed to photoinduced hole doping of graphene by interfacial charge transfer. We discuss possible microscopic pathways for hot carrier processes in the hybrid system.

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