Electron emission characteristics of Al–AlN granular films

Hang, Lingxia; Liu, C.L.; Liang, Zhongshuai; Meng, Liangliang

doi:10.1016/j.apsusc.2008.04.105

Cited by 15 publications

(3 citation statements)

References 13 publications

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“…One way to cut down the cost can be the use of other materials instead of the normally used expensive Pd. In this aspect, we had obtained a stable surface-conduction electron emission from ZnO [8], the electron emission from Al-AlN granular films was also accomplished by others in our laboratory [9,10].…”

Section: Introductionmentioning

confidence: 77%

P‐98: A Novel Dynamic Resolution Improvement Method for Surface‐Conduction Electron‐Emitter Display

Zhao

Xiong

et al. 2009

Symp Digest of Tech Papers

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Section: Introductionmentioning

confidence: 77%

P‐98: A Novel Dynamic Resolution Improvement Method for Surface‐Conduction Electron‐Emitter Display

Zhao

Xiong

et al. 2009

Symp Digest of Tech Papers

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“…In our previous work, the Al-AlN granular films were suggested as a surface-conduction SED emitters' material. The SED prototypes in using granular films were fabricated and the green light from the anode proved the feasibility of the granular films' emitter [11]. The primary electric properties show a low drivingvoltage of 10-20 V and driving-current of 0.06 mA for one unit (sub-pixel).…”

Section: Introductionmentioning

confidence: 99%

Electroforming characteristics of SED emitter in Al-AlN granular films

Liang

Ren

2011

Front. Optoelectron. China

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The Al-AlN granular film was proposed as a cathode emitter of surface-conduction electron-emission display (SED) and the effect of Al-AlN granular films' resistivity on electroforming in experiment and simulation methods was studied. Electroforming could be successfully completed with appropriate Al-AlN granular film resistivity between 1.98 and 15.10 mΩ$cm, and the corresponding turn-on voltage of electroforming increased from 6.2 to 10.5 V with the resistivity increasing. In addition, a temperature profile on Al-AlN emitter was simulated and the temperature decreased from middle to two sides, which were corresponding to surface morphology of Al-AlN emitter after electroforming.

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“…In subsequent decades, many researchers at home and abroad studied the metal, metal oxides and the semiconductor material's surface conduction electron emission [2][3][4] .The researcher(Sheng Lei)of Xi'an Technological University use C-Ti to prepare cathode and finds that the carve of F-N presents linear. So she thinks the emission mechanism is field emission [5] .…”

Section: Introductionmentioning

confidence: 99%

Surface conduction electron emission source enhanced by back gate electrode

2015

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Surface conduction electron emission device (SED) was fabricated with a back gate electrode. And then the device was electroformed in using continuous triangle wave at vacuum environment. After that we prepare an aluminum back electrode on the back of device. With the back electrode voltage changing, we could observe the change of the emission current. When device voltage and anode are fixed, the device's emission current and efficiency decrease under positive back voltage of 5V. On the contrary, the device's emission current and efficiency increase with negative back voltage of -5V. Our results directly proved that the emission electrons were from the field include cool electron emission, but not from the power induced thermal electron emission due to size-effect.

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Electron emission characteristics of Al–AlN granular films

Cited by 15 publications

References 13 publications

P‐98: A Novel Dynamic Resolution Improvement Method for Surface‐Conduction Electron‐Emitter Display

P‐98: A Novel Dynamic Resolution Improvement Method for Surface‐Conduction Electron‐Emitter Display

Electroforming characteristics of SED emitter in Al-AlN granular films

Surface conduction electron emission source enhanced by back gate electrode

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