Electron Energy-Dependent Charging Effects of Multilayered Dielectric Materials

Abstract

Measurements of the charge distribution in electron-bombarded, thin-film, multilayered dielectric samples showed that charging of multilayered materials evolves with time and is highly dependent on incident energy; this is driven by electron penetration depth, electron emission and material conductivity. Based on the net surface potential's dependence on beam current, electron range, electron emission and conductivity, measurements of the surface potential, displacement current and beam energy allow the charge distribution to be inferred. To take these measurements, a thin-film disordered SiO 2 structure with a conductive middle layer was charged using 200 eV and 5 keV electron beams with regular 15 s pulses at 1 nA/cm 2 to 500 nA/cm 2 . Results show that there are two basic charging scenarios which are consistent with simple charging models; these are analyzed using independent determinations of the material's electron range, yields, and conductivity. Large negative net surface potentials led to electrostatic breakdown and large visible arcs, which have been observed to lead to detrimental spacecraft charging effects. electron beam and grounded conductive layer. (a,b,c,d,g,h) were done at 298 K with (e,f) at 135 K. Exponential fits for the voltage was based on Eq. 3 with (a) τ=475 s (τ Q =6.6 μC), (c) τ=45 s (τ Q =0.63 μC), (g) τ=1137 s (τ Q =1.33 μC). Exponential fits for the currents were based on Eq. 5 with (b) τ=139 s (τ Q =1.93 μC), (d) conductive layer τ=99 s (τ Q =1.37 μC), rear electrode τ=206 s (τ Q =2.86 μC) (f) τ=2880 s (τ Q =3.37 μC), (h) τ=462 (τ Q =0.54 μC). Abstract USU Materials Physics Group Experimentation Fig. 7. Measurements of surface potentials vs time (a, c, e, g) and rear electrode and conductive layer currents vs time (b, d, f, h) for: (a, b) surface dielectric deposition with low energy electron beam and ungrounded conductive layer; (c, d) surface dielectric deposition with low energy electron beam and grounded conductive layer; (e, f) dielectric substrate deposition with high energy electron beam and ungrounded conductive layer; and (g, h) dielectric substrate deposition with high energy

Gamma irradiation-induced absorption in single-domain and periodically-poled KTiOPO_4 and Rb:KTiOPO_4

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DPN Treatment plus Annealing Temperatures for 28nm HK/MG nMOSFETs with CHC Stress

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“…Nevertheless, the channel hot-carrier (CHC) is also one of the main gate dielectric reliability issues. It has not yet been fully and systematically studied, especially the nitridation effect to device performance coming from decoupled plasma nitridation (DPN) process [5] after hot-carrier reliability stress on HfZrO x gate dielectrics. To investigate the basic electric characteristics and reliability characteristics with different annealing on hotcarrier injecting into HfZrOx dielectric layer, the CHC degradation test is made by different stress temperatures and operates on the n-channel MOSFET (nMOSFET) structures with three different channel lengths (L=1, 0.1 and 0.03 m).…”

Temporal and Spatial Correlations in Electron-Induced Arcs of Adjacent Dielectric Islands

“…Justin Christensen, JR Dennison, and Justin Dekany are with the Materials Physics Group in the Physics Department at Utah State University in Logan, photon emissions termed "arcs," which are caused by the rapid discharge of charged insulators [9]. These arcs are often, but not always, localized to smaller regions of the charged surface.…”