Electron field emission characteristics of electrochemical etched Si tip array

Ng, Ka Fai; Yuan, Julin; Cheung, J. T.; Cheah, Kok Wai

doi:10.1016/s0038-1098(02)00287-9

Cited by 26 publications

(15 citation statements)

References 22 publications

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“…2 Field emission properties of many materials, including diamonds, 3 carbon nanotubes ͑CNTs͒, 4-6 Si, 7 GaN, 8,9 and ZnO, 10,11 have been extensively investigated in the past years. 1 Field emission demands that the emitter materials have not only low turn-on voltage but also high durable emission current.…”

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confidence: 99%

Field emission from AlN nanorod array

Tang

Cong

Zhao

et al. 2005

Applied Physics Letters

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Single-crystalline mushroom-like AlN nanorod array has been synthesized. The AlN nanorods, with diameters of 50–200nm and lengths of several micrometers, are distributed uniformly with density of 107–108rods∕cm2. The field emission measurements show that the turn-on field is 8.8V∕μm at a field emission current density (J) of 10μA∕cm2, and the J (10.31mA∕cm2) fluctuation is as small as 2% within an hour. The relationship between the nanostructure and field emission properties is discussed. The low turn-on field and high current stability demonstrate that the mushroom-like AlN nanorod array is a promising field emission material.

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confidence: 99%

Field emission from AlN nanorod array

Tang

Cong

Zhao

et al. 2005

Applied Physics Letters

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“…It is very interesting to find that the field emission properties can be improved by forming the patterned structures. 11 Since the area density in our case is obviously high, it is reasonable that the threshold electric field obtained here is significantly improved. It is also suggested that the formation of Si nanodots in the films can induce the internal field enhancement process which may increase the effective local electric field significantly and the field emission properties can be improved as a consequence.…”

Section: Resultsmentioning

confidence: 64%

High density Si nanodots: fabrication and properties

Zhou

et al. 2008

SPIE Proceedings

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We propose an approach to achieve single layer of Si nanodots arrays on insulating layer by using KrF pulsed excimer laser irradiation on ultra-thin hydrogenated amorphous silicon films followed by thermal annealing. Under the suitable fabrication conditions, the area density of formed Si nanostructures can be higher than 10 11 cm -2 as revealed by AFM images. The size of formed Si nanodots is 3-4 nm for sample with initial a-Si:H film thickness of 4 nm. Room temperature visible light emission can be observed from laser irradiated a-Si:H film after thermal annealing. The results on electron field emission properties were also presented in this paper.

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“…Furthermore, carbon nanotube emitters stably operate at moderate vacuum conditions. There are many reports on the field emission properties of carbon nanotubes [5][6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Emission characteristics of carbon nanotubes at large electrode distances

et al. 2010

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Carbon nanotubes (CNT) were synthesized using a DC thermal plasma method. Nanotubes from the cathode were analyzed by electron microscopy and were then studied for their field emission properties. The CNTs were deposited on a tungsten wire, which acted as the cathode. The main aim was to push the distance between the electrodes outside those previously attempted. The field emission current was measured using a phosphorous coated ITO (indium tin oxide) glass plate. Images of the field emitted electrons impinging on the phosphorous screen were also recorded and analyzed. The I-V curves for the field emission were recorded at various distances between the electrodes. Similar studies were performed for commercially obtained (from two different sources) single-walled carbon nanotubes and the results compared with the as-produced nanotubes.

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Electron field emission characteristics of electrochemical etched Si tip array

Cited by 26 publications

References 22 publications

Field emission from AlN nanorod array

Field emission from AlN nanorod array

High density Si nanodots: fabrication and properties

Emission characteristics of carbon nanotubes at large electrode distances

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