Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides

Yamashita, Takumi; Hasegawa, Shigehiko; Nishida, Shuzo; Ishimaru, Manabu; Hirotsu, Yoshihiro; Asahi, H.

doi:10.1063/1.1869549

Cited by 57 publications

(49 citation statements)

References 18 publications

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“…For the synthesis of GaN based nanostructures several techniques have been used, for example, metal-organic chemical vapor deposition [8], laser ablation [9], molecular beam epitaxy [10], the solgel method [11], template-induced growth [12], sublimation method [13], halide vapor phase epitaxy (HVPE) [14] and conversion of amorphous gallium oxide nanotubes [15]. Among the various kinds of fabrication methods, HVPE is an attractive technique since it has the advantages of high growth rate and relatively low cost.…”

Section: Introductionmentioning

confidence: 99%

Growth of GaN nanotubes by halide vapor phase epitaxy

et al. 2011

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We have investigated low temperature growth of GaN nanostructures using halide vapour phase epitaxy on c-oriented Al 2 O 3 and Au-coated Al 2 O 3 substrates. Depending on the III/V ratio and the growth temperature, the shape and density of the structures could be controlled. By increasing the GaCl partial pressure, the structure changed from dot like to nanotubes. The nanotubes, which could be open or closed, were about 1 µm long with a diameter of typically 200 nm. In addition, it was observed that the nanostructures were spontaneously nucleated at droplets of Ga or, when using Au coated Al 2 O 3 , on droplets of Au/Ga alloy. By varying the growth temperature, the inner diameter of the nanotubes could be controlled. The experimental results suggest that this approach with prepatterned Au-coated Al 2 O 3 substrates has the potential for fabrication of well-organized nanotubes with a high density.

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Section: Introductionmentioning

confidence: 99%

Growth of GaN nanotubes by halide vapor phase epitaxy

et al. 2011

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“…2 in Ref. [3]). Such interface roughness is thought to influence the growth direction of the nanorods.…”

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confidence: 91%

“…We have recently grown highly crystalline hexagonal GaN nanorods on Si(100) substrates with native silicon oxides by radio frequency (RF) plasma-assisted molecular beam epitaxy (MBE). We have reported that the one-dimensionality and highly c-axis orientation of hexagonal GaN nanorods, as well as their strong chemical and mechanical stability and low electron affinity of 2.7-3.2 eV, result in excellent field emission characteristics [3,4]. It has also been reported that during MBE growth, sharp-pointed structures are formed on the top of GaN nanorods, and that each nanorod is single crystallite with low defect density [3,5].…”

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confidence: 96%

Influence of native silicon oxides on the growth of GaN nanorods on Si(001)

Hasegawa

Seo

Uchida

et al. 2009

Phys. Status Solidi (c)

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Influence of native Si oxides on the growth of GaN nanorods on Si(001) substrates have been investigated. At the initial stage of GaN growth on clean Si(001) substrates at 450 °C, (2x1) reflection high‐energy electron diffraction patterns immediately change into halo patterns, indicating growth of amorphous materials. The cross‐sectional transmission microscopy observation and secondary ion mass spectroscopy measurement reveal that there exists an amorphous Six Ny layer at the GaN/Si interface. This provides the evidence that during the initial growth of GaN on clean Si substrates with out native oxides, nitridation of Si takes place to form amorphous Six Ny as well as GaN. The structural properties and surface morphologies of these interfacial layers affect GaN nanorod growth. By contrast, native oxides act as a mask against nitridation of Si substrates. Since plasma‐activated nitrogen mainly reacts with Ga to form GaN, GaN growth always proceeds under a desired N‐rich growth condition. As a result, GaN nanorods are uniformly grown on Si(001) with native oxides. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Recently, we have grown highly c-oriented hexagonal GaN nanorods on Si(001) substrates with native silicon oxides (SiO 2 ) by RF-plasma-assisted MBE (RF-MBE) under nitrogen-rich conditions [6]. GaN nanorods show excellent photoluminescence due to their dislocation-free nature.…”

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confidence: 99%

Structural and magnetic properties of diluted magnetic semiconductor GaGdN nanorods

Tambo

Hasegawa

Higashi

et al. 2010

Phys. Status Solidi (c)

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Diluted magnetic semiconductor GaGdN nanorods were grown on Si (001) substrates with native silicon oxides by molecular‐beam epitaxy with radio frequency nitrogen plasma. The Gd cell temperature dependences of their structural and magnetic properties were systematically studied. It was found that higher Gd fluxes suppress the growth of nanorods along the c‐direction and form GdN secondary phase. Magnetic measurement also revealed that nanorods of high content Gd showed small magnetization, indicating that GdN come to form and therefore the amount of Gd atoms substituted for Ga sites in GaGdN decreases. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Electron field emission from GaN nanorod films grown on Si substrates with native silicon oxides

Cited by 57 publications

References 18 publications

Growth of GaN nanotubes by halide vapor phase epitaxy

Growth of GaN nanotubes by halide vapor phase epitaxy

Influence of native silicon oxides on the growth of GaN nanorods on Si(001)

Structural and magnetic properties of diluted magnetic semiconductor GaGdN nanorods

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