Electron Field Emission from Undoped and Doped DLC Films

Литовченко, В.Г.; Еvtukh, А.А.; Klyui, N.I.; Litvin, Yu. M.; Kudzinovsky, S.Yu.; Chakhovskoi, A.G.; Felter, T. E.

doi:10.1557/proc-558-577

Cited by 6 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nowadays, in connection with the growing role of vacuum micro-and nanoelectronics, it becomes important to search for narrow band gap semiconductors as promising materials for high efficiency electron field emission (EFE) cathodes. It is known that a well-conducting carbon mixture of nanotubes and nanoplates demonstrates very good EFE properties [1][2][3][4][5], and it is a promising material for the fabrication of large area flat displays [5]. In this case, micro-or even nanosize tip cathodes have been used.…”

Section: Introductionmentioning

confidence: 99%

Electron field emission from narrow band gap semiconductors (InAs)

Литовченко

Еvtukh

Semenenko

et al. 2007

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We propose to use InAs for the development of effective electron field emitters on the basis of a new technological approach for the preparation of highly textured surfaces which allows one to obtain peculiar fine rod-like micro-and nanostructures. A decrease of the current-voltage characteristics slope by a factor of 3.5 was observed in the Fowler-Nordheim plot with increasing applied voltage. This significant change in the slope is discussed on the basis of two different mechanisms: the inter-valley hot carrier redistribution and the existence of two arrays of nanocathodes with different radii of the top. The developed InAs nanostructures may also find applications in IR-sensitive displays, submicron sources of irradiation and devices with variable bands and barriers.

show abstract

Section: Introductionmentioning

confidence: 99%

Electron field emission from narrow band gap semiconductors (InAs)

Литовченко

Еvtukh

Semenenko

et al. 2007

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…[1][2][3] There have been numerous reports on electron field emissions from carbon-based materials, such as diamond, nano-diamond, amorphous diamond, carbon nanofibers, tetrahedral amorphous carbon ͑ta-C͒ films, and random or oriented carbon nanotubes ͑CNTs͒. The industrial applications are primarily aimed toward flat panel displays and cold cathodes for microelectronics.…”

Section: Introductionmentioning

confidence: 99%

Electron emission from nanotips of amorphous diamond

Kan

Huang

Sung

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Nanoscale electron field emissions from the bare, hydrogenated, and graphitelike-layer-covered tetrahedral amorphous carbon films Amorphous diamond can be deposited with a high-density (4ϫ10 10 emitters/cm 2 ) of nano-sized emitters. The turn on applied field strength was reduced by increasing aspect ratio of amorphous diamond nanotips. Moreover, the field emission was highly sensitive to the aspect ratio of tips, and relatively inert to the sp 3 /(sp 3 ϩsp 2 ) ratio. The lowest turn on applied field strengths was 4.6 V/m at the current density of 10 A/cm 2 ; and 11 V/m at the current density of 10 mA/cm 2 . High reproducibility of field emission was also observed in this study.

show abstract

“…Carbon-based materials have recently been regarded as the best cold cathodes for field emission displays and for vacuum electronic devices. 1 Amorphous diamond or, in general, diamond-like carbon (DLC) films are very attractive for field emission applications [2][3][4] because of their wide availability.…”

Section: Introductionmentioning

confidence: 99%

Field Emission Characteristics of Amorphous Diamond

Kan

Huang

Sung

et al. 2003

Journal of the American Ceramic Society

View full text Add to dashboard Cite

Amorphous diamond is diamond‐like carbon (DLC) that contains no other impurities. It can be conveniently deposited by bombarding a substrate with a cathodic arc. The arc contains a flux of ionized carbon atoms that are driven by a negative bias. In this research, this bias is set at 20 V. Various forms of amorphous diamond were deposited on silicon substrate of n‐type (100) by varying the arc current set at 30, 50, 80, and 100 A. The sp3/(sp3+ sp2) ratios of these deposited coatings were measured by electron spectroscopy for chemical analysis and Raman spectroscopy, and the asperity height these films were imaged by an atomic force microscope. It was found that the sp3/(sp3+ sp2) ratio peaked at a value of about 50% when the current was set at 80 A. The average roughness increased linearly with the increasing current from ∼0.5 nm at 30 A to about 1.1 nm at 100 A. The maximum asperity height was approximately 10 times that of the above average roughness figures in all cases. The minimum effective work function (Φe) calculated by a Fowler–Nordheim plot was about 0.063 14 eV. By controlling the asperity height of amorphous diamond, high‐emitting efficiencies could be achieved with good reproducibility.

show abstract

Electron Field Emission from Undoped and Doped DLC Films

Cited by 6 publications

References 6 publications

Electron field emission from narrow band gap semiconductors (InAs)

Electron field emission from narrow band gap semiconductors (InAs)

Electron emission from nanotips of amorphous diamond

Field Emission Characteristics of Amorphous Diamond

Contact Info

Product

Resources

About