Electron–Hole Correlation Effects on Donor–Acceptor Pairs

Kartheuser, E.; Babcenco, A.; Evrard, R.

doi:10.1002/pssb.2221090141

Physica Status Solidi (b)

1982

DOI: 10.1002/pssb.2221090141

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Electron–Hole Correlation Effects on Donor–Acceptor Pairs

E. Kartheuser

A. Babcenco

R. Evrard

Abstract: The effect of the electron-hole correlations on the effective mass electronic states of donor-acceptor (DA) pairs in polar semiconductors is investigated. Variational calculations are carried out and compared with previous theoretical work in the case of GaP and ZnSe. Analytic expressions for the energy, charge density, and pair distribution function of DA pairs are obtained as a function of the pair separation R. It is shown that whereas the energy and the charge distribution of a DA pair are only slightly af… Show more

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Cited by 4 publications

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Variational Calculations for Ground‐State Energies of Donor–Acceptor Pairs

Englisch

1983

Physica Status Solidi (b)

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For the calculation of ground-state energies of donor-acceptor (DA) pairs (and also of two related three-body problems) variational ansatzes are tested including the correlation between electron and hole. A refinement of a paper by Kartheuser et al. is presented for small distances of the DA pairs. Further, another method to solve the integrals occurring is shown which avoids numerical integration. Zur

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Variational Calculations for Ground‐State Energies of Donor–Acceptor Pairs

Englisch

1983

Physica Status Solidi (b)

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Photoluminescence of CdTe doped with arsenic and antimony acceptors

Soltani

Certier

Evrard

et al. 1995

Journal of Applied Physics

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A detailed characterization of the impurity centers involved in the photoluminescence (PL) of p-type CdTe doped with arsenic (As) and antimony (Sb) has been performed. The PL spectrum has been measured from 1.35 eV up to the band edge and as a function of temperature (4.2 up to 30 K). In addition to the familiar broad PL line centered at 1.45 eV and present in undoped and doped materials, the doped samples exhibit a new band near 1.54 eV showing a fine structure composed of two peaks whose intensities vary with temperature. The observed longitudinal optical (LO) phonon replicas associated with the zero-phonon lines, at 1.45 eV and 1.54 eV, respectively, are characterized by a Huang-Rhys factor S=1.3±0.1 and S=0.30±0.02. The various electron-hole recombination processes are explained by means of a simple analytic model correlating the position of the zero-phonon lines to the relative intensities of the phonon side bands. The model accounts for the chemical shift of the defect centers and describes the effect of the charge carrier LO-phonon interaction in the framework of the adiabatic approximation within the envelope function approach. Comparison between theory and experiment leads to the following values for the effective Bohr radii: aAs=(10.6±0.1) Å, aSb=(10.3±0.1) Å, and ionization energies: EAs=(58±2) meV, ESb=(61±2) meV. It also leads to conclude to the presence of native shallow donors with binding energy ED=(13±2) meV and of deeper native acceptor complexes with effective Bohr radius aA=(6.1±0.1) Å and ionization energy EA=(157±2) meV.

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Zero-phonon recombination spectra of donor-acceptor pairs in GaP and ZnSe: Model-impurity-potential approach

Munnix

Kartheuser

1982

Phys. Rev. B

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The inAuence of central-cell corrections on electron-hole recombination energies of donor-acceptor (DA) pairs in III-V and II-VI semiconductors is investigated. A variational treatment of the DA complex is developed in the framework of the effective-mass theory, including the effects of interaction between the charge carriers and the longitudinal-optical phonons within the static approximation. The effective-mass Hamiltonian of the DA pair, based on Frohlich s continuum theory, allows for central-cell corrections by means of a suitable impurity model potential adjusted to experiment in the case of isolated impurities. The orbital radii of the electron and hole wave function, its departure from spherical symmetry, and the DA-pair energy are given as a function of the donor-acceptor separation R. The central-cell correction is found to decrease appreciably at small R. The results are compared with previous theoretical work and experiments on zero-phonon spectra of DA pairs in ZnSe and in GaP. It is shown that the central-cell correction cannot be neglected in order to explain the radiative DA-pair recombination energies. The model potential adopted in the present work reproduces the general trend of the R-dependent electron-hole recombination energies deduced from DA-pair spectra involving dopants of various depth.

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Electron–Hole Correlation Effects on Donor–Acceptor Pairs

Cited by 4 publications

References 19 publications

Variational Calculations for Ground‐State Energies of Donor–Acceptor Pairs

Variational Calculations for Ground‐State Energies of Donor–Acceptor Pairs

Photoluminescence of CdTe doped with arsenic and antimony acceptors

Zero-phonon recombination spectra of donor-acceptor pairs in GaP and ZnSe: Model-impurity-potential approach

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