Zero-phonon recombination spectra of donor-acceptor pairs in GaP and ZnSe: Model-impurity-potential approach

Munnix, S.; Kartheuser, E.

doi:10.1103/physrevb.26.6776

Cited by 12 publications

(5 citation statements)

References 43 publications

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“…To validate this work, we have taken this factor into account for an acceptor impurity at using the expression proposed by Zorkani et al [7]. They got interested in the correction of central cell to take into account the chemical shift using an analytical model of potential for impurity proposed by Munnix et al [8]. The central cell potential must account for two facts:…”

Section: Results and Comparison With Theoretical And Experimental Datamentioning

confidence: 97%

“…This is a legitimate approximation since the phonons which interact strongly with the electron have a wave-length long compared to the lattice distance, and, as we shall see, the polaron extends over many lattice distances. So, the final state is described in the Lee-Low Pines (L.L.P) approximation by [17]:…”

Section: Theoretical Modelmentioning

confidence: 99%

“…Munnix et al [17 ] proposed a potential with central cell correction of the same type as the previous one and applied it successfully to the recombination spectra of donor-acceptor pairs in the case of GaP and ZnTe. This potential is of the form: The parameter λ can take the values +1 or -1 depending on the depth of the impurity considered.…”

Section: 𝑉(𝑟mentioning

confidence: 99%

“…Winnie Otieno et al showed that the cross section of photoionization in quantum wells is sensitive to the location of the impurity and the frequency of the incident photons [6]. In particular, Zorkani et al [7] studied the computation of the cross section of photoionization taking into account the carrier interaction load -phonon as well as the central correction by means of an analytical potential of impurity proposed by Munnix et al [8] in the case of gallium arsenide doped with manganese. In fact, the wave functions characterizing the state of the system are a function position variables of electrons and nuclei.…”

Section: Introductionmentioning

confidence: 99%

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Impact of overlapping vibrational wave functions on the spectra of the photoionization cross section

2022

JCBSC

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Section: Results and Comparison With Theoretical And Experimental Datamentioning

confidence: 97%

Section: Theoretical Modelmentioning

confidence: 99%

Section: 𝑉(𝑟mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Impact of overlapping vibrational wave functions on the spectra of the photoionization cross section

2022

JCBSC

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“…Such amplitudes play an important role in the time-dependent formulation of molecular spectro-scopic phenomena such as Raman scattering and absorption spectra. 16,17 In the present paper we consider the case of polar doped semiconductors, such as CdTe, whose electronic quality can be assessed by photoluminescence ͑PL͒, 18,20,21 from the strength and sharpness of the spectral components. Using the adiabatic approximation, we can study the properties of the ͑boson͒ phonon field according to Refs.…”

Section: Introductionmentioning

confidence: 99%

Displaced squeezed number states of the phonon field in polar semiconductors

1996

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Considering that the Fröhlich continuum model of polarons, in the static approximation, describes the electron-phonon interaction in polar semiconductors, and that the Hamiltonian of the generalized parametric oscillator represents the ion vibrations, we have studied a way of producing phonon-displaced squeezed number states. By the use of the evolution operator method, the exact wave function as well as the probability density are obtained. In order to see explicitly the wave function's squeezing property, we have given the analytical forms of the variances ⌬q and ⌬p. Dealing with the radiative recombination process, which occurs at imperfections, we have derived the phonon number distribution. A calculation of Mandel's Q parameter, which accounts for the kind of the distribution, and of the Huang-Rhys factor S, are also presented. An interesting result is obtained when we study the case of a simple driven harmonic oscillator, whose Q parameter imposes the value 0.5 on the factor S, in order to have a Poissonian distribution. Any deviation from this value yields sub-or super-Poissonian distributions which characterize the photoluminescence ͑PL͒ spectrum, as regards the sharpness of the PL lines and the number of phonons involved in the recombination process. With regard to the time dependence of the factor S and of the Hamiltonian representing the ion vibrations, unexpected values ͑in comparison with the time-independent case͒ for the Q parameter can be found. This behavior can affect the number of emitted phonons, defined by the kind of the phonon number distribution.

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Polarizability of Donors in Polar Semiconductors. Effect of a Weak Magnetic Field

Cahay

Kartheuser

1984

Physica Status Solidi (b)

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The electrical pohrizability t.cnsor of shallow donors in polar semiconductors is calculated in the presence of a wcak rnagnctic field. A variational t.rcatment of the donor is developed in the framework of the effective-mass theory, including the effects of interaction between the charge carriers and the longitudinal-optical (LO) phonons within the static approximation. The effective-mass Hamiltoriian of the donor a.llows for central-cell corrections by means of a phenomenological impurity potent.ia.1. The results are compmcd with previous theoretical work and experiment. in the cam of donor impurities in Si. I t is shown t.hat the donor polarizability depends strongly on the form chosen for the model impurity potential and undergoes a 30 to 50% dccrcase due to the electron-(LO)phonon i n k a c t i o n in the CBSC of impurities in 111-V and 11-VI compounds, respectively.Der elekt.rische Polarisa,tionstcnsor fhchcr Ilonatorcn in polaren Hableitern wird fur den Pall schwacher Msgnetfelder bercchnet. Ein Variationsverfahrcn fiir dcn Donator wird unter Benutznng der Effcktivmassentheoric cntwickelt, wobei die Wechselwirkung zwischen dcn geladcncn 'l'eilchen nnd den longitudinalen-optisehcn (LO)-Phononen einbegriffcn ist und die statischo Niiherung bcnutzt wird. Der Effektivmassen-Hamiltonoperator ent.halt ein phanomenologisches Potential, welchcs den ,,central cell"-Effekt bcrucksichtigt. Die Ergebiiisse werden mit vorhcrgehcnden theorctischen Hcrcchnungcn und Expcrimenten im Fallc von Donatoren in Si verglichen. Hs mird bewiescn, daS die Polarisierbarlrcit wesent.lich von der Form des Storstellenpotentials abhangt und cine Verminderung yon 30 bis 50% durch die Elektron-(L0)I'hononen-Wcchselwirkung im Falle der 111-V-bcziehungsweise 11-Vl-Halbleitcrn erfahrt.

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Zero-phonon recombination spectra of donor-acceptor pairs in GaP and ZnSe: Model-impurity-potential approach

Cited by 12 publications

References 43 publications

Impact of overlapping vibrational wave functions on the spectra of the photoionization cross section

Impact of overlapping vibrational wave functions on the spectra of the photoionization cross section

Displaced squeezed number states of the phonon field in polar semiconductors

Polarizability of Donors in Polar Semiconductors. Effect of a Weak Magnetic Field

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