Electrong-factor study in Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb and GaSb–Ga_{1 −x}In_xAs_ySb_{1 −y}–GaSb quaternary alloy semiconductor spherical quantum dots

Abstract

Within an interpolation scheme, we have determined the electron g-factor and the Kane interband energetic parameter of Ga 1−x In x As y Sb 1−y -GaSb semiconductors quaternary alloy and used them to determine the electron g-factor in GaSb-Ga 1−x In x As y Sb 1−y -GaSb spherical quantum dots (SQDs) as well as to calculate the Landau levels. In the low-dimensional systems a framework of an eight-band effective-mass model in which the contribution of the conduction remote bands and the k • p mixing between the conduction band c 6 and the valence bands v 8 and v 7 states are considered. Our results show that the dependence of the bulk electron g-factor as a function of x can be fit with a cubic polynomial. We have established a relation between the electron g-factor and both the radius and the indium concentration in GaSb-Ga 1−x In x As y Sb 1−y -GaSb SQDs. For these quaternary SQDs with a parabolic confining potential we have found that the difference between the electron energy levels corresponding to spin-up and spin-down states is larger (∼10 meV) than the corresponding states in GaAs-(Ga, Al)As quantum wells (QWs) (∼0.2 meV) of comparable dimensions and increases with the applied magnetic field.