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Within an interpolation scheme, we have determined the electron g-factor and the Kane interband energetic parameter of Ga 1−x In x As y Sb 1−y -GaSb semiconductors quaternary alloy and used them to determine the electron g-factor in GaSb-Ga 1−x In x As y Sb 1−y -GaSb spherical quantum dots (SQDs) as well as to calculate the Landau levels. In the low-dimensional systems a framework of an eight-band effective-mass model in which the contribution of the conduction remote bands and the k • p mixing between the conduction band c 6 and the valence bands v 8 and v 7 states are considered. Our results show that the dependence of the bulk electron g-factor as a function of x can be fit with a cubic polynomial. We have established a relation between the electron g-factor and both the radius and the indium concentration in GaSb-Ga 1−x In x As y Sb 1−y -GaSb SQDs. For these quaternary SQDs with a parabolic confining potential we have found that the difference between the electron energy levels corresponding to spin-up and spin-down states is larger (∼10 meV) than the corresponding states in GaAs-(Ga, Al)As quantum wells (QWs) (∼0.2 meV) of comparable dimensions and increases with the applied magnetic field.

Photoreflectance and photoluminescence study of Ga 0.76 In 0.24 Sb / GaSb single quantum wells: Band structure and thermal quenching of photoluminescence Composition and carrier-concentration dependence of the electronic structure of In y Ga 1 − y As 1 − x N x films with nitrogen mole fraction of less than 0.012 J. Appl. Phys. 98, 093714 (2005); 10.1063/1.2127126Modeling and analysis of photomodulated reflectance and double crystal x-ray diffraction measurements of tensilely strained InGaAs/InGaAsP quantum well structures