Electron-impact ionization of Sn4+

Jonauskas, V.

doi:10.1016/j.jqsrt.2019.106659

Cited by 5 publications

(2 citation statements)

References 39 publications

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“…This effect for the singleionization cross sections has to appear from the double ionization threshold (47.71 eV). It was previously demonstrated that the single-ionization calculations have to include the diminishing contribution from the direct double ionization to explain the measurements (Pakalka et al 2018;Jonauskas 2019). What is more, additional measurements may be needed to determine the reason for the discrepancies between the theoretical and experimental data.…”

Section: Resultsmentioning

confidence: 99%

Electron-impact single ionization of Si⁺

Jonauskas

2020

A&A

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Electron-impact single ionization is studied in the Si+ ion by considering transitions among energy levels. The study includes excitation-autoionization (EA) and collisional ionization processes. The excitations are investigated up to shells with the principal quantum numbers n ≤ 10. It is shown that correlation effects included in the EA calculations play a crucial role in explaining measurements. The correlation effects diminish the EA cross sections by ∼30% compared to single-configuration calculations. However, the collisional ionization is not significantly affected by an extension of the basis of interacting configurations. Good agreement between the presented level-to-level distorted wave data and experimental measurements is found for the single ionization of the Si+ ion.

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Section: Resultsmentioning

confidence: 99%

Electron-impact single ionization of Si⁺

Jonauskas

2020

A&A

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“…Borovik et al also employed the CADW method to calculate EISI cross-section for ( ) = -+ Sn q 4 13 q , but their calculations did not include the contribution of high-order atomic processes [27]. Jonauskas et al investigated EISI cross-section for Sn 4+ using a level-to-level method, which has a closed 4d 10 electronic structure [31]. Recently, Liu et al developed a general method to calculate EISI cross-section for Sn 13+ using the fine-structure level distorted-wave approximation from the threshold to 4000eV and including the contribution of high-order atomic processes [32].…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigations on electron-impact single-ionization cross section of Sn ¹¹⁺

Zhang,

Ding,

Gao

et al. 2024

Phys. Scr.

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The total cross-section of electron-impact single ionization for the ground configuration 3d104s24p64d3 and excited configuration 3d104s24p64d24f of Sn11+ is determined from the ionization threshold to 1000 eV. The contributions of direct ionization, excitation auto-ionization, and resonant excitation double auto-ionization to the total electron-impact single ionization cross-section are systematically demonstrated. The cross-section of direct ionization and excited auto-ionization are determined using the level-to-level method, while the cross-section of partially resonant excited double auto-ionization are determined through the configuration-averaged method. To obtain convergence, excitation channels with the maximum principal quantum number up to n = 25 are considered. A comparison of the present results with the experimental data [Borovik et al. J. Phys. B 46, 175201 (2013)] reveal considerably improved agreement when including the resonant-excitation double auto-ionization in the calculation.

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