Electron induced dissociation of hydrogen or deuterium–silicon complexes in GaAs; application to the reliability of GaAs based electronic or optoelectronic devices

Silvestre, S.; Bernard, D.; Mezière, S.; Constant, E.

doi:10.1016/s0921-5107(00)00653-x

Materials Science and Engineering: B

2001

DOI: 10.1016/s0921-5107(00)00653-x

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Electron induced dissociation of hydrogen or deuterium–silicon complexes in GaAs; application to the reliability of GaAs based electronic or optoelectronic devices

S. Silvestre¹,

D. Bernard²,

S. Mezière³

et al.

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“…Si-H(D) complexes in GaAs have been shown to be dissociable under e-beam or above band gap illumination, with strong isotope effects providing several evidences that the H(D) release under e-beam is induced by an electronic excitation [10][11][12][13] . On the other hand, B-D pairs in diamond do not follow this scheme.…”

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confidence: 99%

Stability of B–H and B–D complexes in diamond under electron beam excitation

Barjon

Mehdaoui

Jomard

et al. 2008

Applied Physics Letters

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The substitution of hydrogen by deuterium is generally known to increase the stability of the defect passivation in semiconductors, occasionally giving rise to giant isotope effects.In this work, the stability under an electron beam irradiation of boron-hydrogen and boron-deuterium pairs in diamond are compared. The dissociation kinetics was followed in situ by cathodoluminescence spectroscopy. Surprinsingly, B-H complexes are more stable than B-D complexes under electron beam at low temperature (~ 100K), with a dissociation rate about twice smaller. These experimental results are coherent with a dissociation mechanism involving a cumulative vibrational excitation of the complexes.

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mentioning

confidence: 99%

Stability of B–H and B–D complexes in diamond under electron beam excitation

Barjon

Mehdaoui

Jomard

et al. 2008

Applied Physics Letters

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show abstract

Electron-beam-induced dissociation of (B,D) complexes in diamond mediated by multiple vibrational excitations

2010

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Electron induced dissociation of hydrogen or deuterium–silicon complexes in GaAs; application to the reliability of GaAs based electronic or optoelectronic devices

Cited by 2 publications

References 11 publications

Stability of B–H and B–D complexes in diamond under electron beam excitation

Stability of B–H and B–D complexes in diamond under electron beam excitation

Electron-beam-induced dissociation of (B,D) complexes in diamond mediated by multiple vibrational excitations

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