Electron injection and trap filling in insulating layers

Krause, H.

doi:10.1002/pssa.2210360232

Cited by 15 publications

(6 citation statements)

References 25 publications

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“…Note that the time constants of electron release from the traps located in the oxide layers calculated from the measured values using (2) were found to be in the range from 50 to 100 s. Using the expression derived by Lundstrom and Svensson [lo] for the tunnel transition probability of electrons from traps, these values lead to an average distance 6 of the traps from the interface of about 2.9 to 3.1 nm. This result is comparable with that reported by other authors [5] for SiO, thermally grown on silicon.…”

supporting

confidence: 93%

“…These centres can exchange their charge with the conduction or valence bands of the semiconductor via a thermally activated tunneling process. The time required for charge exchange between the trap centres and the semiconductors is usally of the order of a few minutes [5]. Taking into account this fact, it is possible to explain the transient current characteristics presented in Fig.…”

mentioning

confidence: 97%

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Separation and Determination of the Interface and Oxide Trap Densities in MOS Structures by the Transient Current Technique

Khôi

Minh²,

Binh³

et al. 1993

Phys. Stat. Sol. (a)

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confidence: 93%

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confidence: 97%

Separation and Determination of the Interface and Oxide Trap Densities in MOS Structures by the Transient Current Technique

Khôi

Minh²,

Binh³

et al. 1993

Phys. Stat. Sol. (a)

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“…This is confirmed in the present study. Further it has been reported (see [lo] and references therein and [13]) that special kinds of deep traps in SiO, are located predominantly near the interfaces. From this one has to expect the formation probability of critical clusters of hopping sites t o decrease more or less strongly with film thickness.…”

Section: Discussionmentioning

confidence: 99%

Hopping Conduction in SiO2 Films Thermally Grown on Phosphorus-Doped Polycrystalline Silicon

Krause

Schell

Golinsky

1984

Phys. Stat. Sol. (a)

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At SiO2 films thermally grown on phosphorus doped polycrystalline silicon hopping currents according to j = A exp ( B/F1/4) are observed in the field range of 5 × 105 to 2.5 × 106 V cm−1. From the j−F characteristics of films thicker than 50 nm grown in wet nitrogen the density of deep traps is calculated to be (2.75 ± 1.5) × 1018 cm−3 within an energy band at the Fermi level which has a width at least of 0.065 eV. In films grown in dry oxygen the according values are somewhat lower. At thinner films the trap density strongly increases with decreasing film thickness to values above 1019 cm−3. The results well agree with the assumption of channel‐like regions of enlarged trap density acting as hopping paths. The calculated trap densities then are concerned with these paths of hopping conduction which are embedded in larger areas of lower trap density.

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“…Because the barrier in tunnel processes determines the transition probability very strongly, the hole injection from the positive electrode should be of much lower probability and therefore in first order may be neglected. By simple considerations the injection current density j is derived to be (see [18])…”

Section: Charge Injection and Trap Fillingmentioning

confidence: 99%

Trap Induction and Breakdown Mechanism in SiO2 Films

Krause

1985

phys. stat. sol. (a)

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Dielectric breakdown in SiO, films is derived from trap filling of clusters of large density of deep neutral electron traps within the interface regions of the films. The real existence of such clusters is supported by some well known experimental results about microdefects, interface region trap densities, and hopping current measurements in SiO, films. The supposed mechanism of dielectric breakdown starts with electron injection via tunnel or hopping transitions from the negative electrode into these clusters. There the trapped charge causes local internal fields which may be large enough to induce further traps. If trap induction by the local field exceeds a critical value it increases avalanche like so that local current densities pass over to the final phase of thermal breakdown. As a proof the theory derived can explain the increase of breakdown field strength with decreasing film thickness as a direct consequence. Der dielektrische Durchbruch in Si0,-Schichten wird aus der Fiillung von Clustern hoher Dichte tiefer, neutraler Elektronenhaftstellen in den Randzonen der Schichten hergeleitet. Das reale Vorhandensein solcher Cluster wird durch einige bekannte experimentelle Ergebnisse iiber Mikrodefekte, Trapdichten in Randzonen und Hoppingstrom-Messungen in Si0,-Schichten gestiitzt. Der angenommene Mechanismus des dielektrischen Durchbruchs wird durch Elektroneninjektion auf dem Wege von Tunnel-oder Hoppingiibergangen von der negativen Elektrode in diese Cluster eingeleitet. Dort fiihrt die getrappte Ladung zu lokalen inneren Feldern, die stark genug sein konnen um weitere Haftstellen zu induzieren. Wenn diese Induktion von Haftstellen durch das lokale Feld einen kritischen Wert iibersteigt, wachst sie lawinenartig an, so da13 die lokalen Stromdichten in die Endphase des thermischen Durchbruchs iibergehen. Als Priifung ihrer Tragfahigkeit kann die entwickelte Theorie die Zunahme der Durchbruchfeldstarke mit abnehmender Schichtdicke als direkte Konsequenz erklaren.

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Electron injection and trap filling in insulating layers

Cited by 15 publications

References 25 publications

Separation and Determination of the Interface and Oxide Trap Densities in MOS Structures by the Transient Current Technique

Separation and Determination of the Interface and Oxide Trap Densities in MOS Structures by the Transient Current Technique

Hopping Conduction in SiO2 Films Thermally Grown on Phosphorus-Doped Polycrystalline Silicon

Trap Induction and Breakdown Mechanism in SiO2 Films

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