Introduction. In natural science, there is a "threshold value" above which a new field of research is opened, and transmission electron microscopes (EMs) have opened such a new field. Ever since dislocation images were obtained with 100 kV EMs 1),2) in Europe and with a 50 kV EM in Japan 3) independently in 1956-57 by means of different specimen preparation methods, materials science has seen a rapid progress thanks to electron microscopy. Dislocations are the most important lattice defects, but their behavior is very sensitive to the thickness of the crystalline materials. As a result, not only the behavior but also the density of the dislocations changes dramatically when the specimen thickness becomes smaller than the critical value, and the changes depend on the kind of phenomena and materials involved. 4)-6) This is one reason why, in order to get the same information about the behavior of lattice defects in thin materials as one would get from bulk materials, highvoltage electron microscopes (HVEMs) are necessary.Practically, 500 kV-class HVEMs are sufficient for this purpose if the materials observed are made of light metals whose atomic number is smaller than 20, 6),7) but the accelerating voltage must be increased with increasing atomic number of the materials observed. Various phenomena occurring in bulk materials have generally been investigated in-situ with ultra-HVEMs with accelerating voltages at least higher than 2,000 kV (2 MV), and/or with HVEMs with voltages lower than 1,500 kV, and the mechanisms behind those phenomena have been made clear dynamically.8)The present report is mainly concerned with the importance of electron channeling at high voltages and with various applications of ultra-HVEMs in materials science.Voltage dependence of the maximum observable specimen thickness. In 1920-30, the structure sensitivity of the behavior of materials was considered to be closely related to existence of lattice defects, and a dislocation model was first proposed by Yamaguchi as reflecting the most important lattice defect. 9) After that, many theories were proposed regarding the dislo- Abstract: Natural science is now extensively developed thanks to electron microscopy, but around 1950, only thin specimens were used because of the low accelerating voltages. The behavior of crystalline materials is very sensitive to specimen thickness, and thus in Japan a practical 500 kV electron microscope was constructed in 1965 for thicker specimens. It was shown that simultaneous reflection increases with increasing accelerating voltage, so that the maximum observable specimen thickness increases almost linearly up to 500 kV. Since simultaneous reflection becomes prominent above 1,500 kV, the in-situ observation of various phenomena representative of most bulk materials has been carried out with an ultra-high voltage electron microscope, whose accelerating voltages can reach 3,000 kV. Thus, even the characteristics of high-Z materials have been clarified in detail, and new applications, such as foreign atom impla...