Electron microscopic studies of ferroelectric and ferroelastic Gd2(MoO4)3. IV. Polarization Reversal and Field Induced Phase Transformation

Yamamoto, Naoki; Yagi, Kazuichi; Honjo, Goro

doi:10.1002/pssa.2210620238

Cited by 20 publications

(9 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, sample charging, local heating, and beam damage can cause problems. As a result, only a relatively small number of in situ experiments on domain wall motion under applied lateral bias or ferroelectric phase transition by optical microscopy, 165,166 scanning, 167,168 and transmission [169][170][171][172][173][174][175] electron microscopy have been reported.…”

Section: (2) Polarization and Domain Dynamics In Ferroelectric Materialsmentioning

confidence: 99%

Local Phenomena in Oxides by Advanced Scanning Probe Microscopy

Kalinin

Shao

Bonnell

2005

Journal of the American Ceramic Society

View full text Add to dashboard Cite

In the last two decades, scanning probe microscopies (SPMs) have become the primary tool for addressing structure and electronic, mechanical, optical, and transport phenomena on the nanometer and atomic scales. Here, we summarize basic principles of SPM as applied for oxide materials characterization and present recent advances in high-resolution imaging and local property measurements. The use of advanced SPM techniques for solutions of material related problems is illustrated on the examples of grain boundary transport in polycrystalline oxides and ferroelectric domain imaging and manipulation. Future prospects for SPM applications in materials science are discussed. In the last two decades, scanning probe microscopies (SPMs) have become the primary tool for addressing structure and electronic, mechanical, optical, and transport phenomena on the nanometer and atomic scales. Here, we summarize basic principles of SPM as applied for oxide materials characterization and present recent advances in high-resolution imaging and local property measurements. The use of advanced SPM techniques for solutions of material related problems is illustrated on the examples of grain boundary transport in polycrystalline oxides and ferroelectric domain imaging and manipulation. Future prospects for SPM applications in materials science are discussed.

show abstract

Section: (2) Polarization and Domain Dynamics In Ferroelectric Materialsmentioning

confidence: 99%

Local Phenomena in Oxides by Advanced Scanning Probe Microscopy

Kalinin

Shao

Bonnell

2005

Journal of the American Ceramic Society

View full text Add to dashboard Cite

show abstract

“…In some of the early works, domain switching in ferroelectrics has been investigated by applying an electric field parallel to the electron beam in the TEM. [8][9][10] More recently, Tan et al have developed an alternative in situ TEM technique by applying an electric field perpendicular to the electron beam on the sample surface. [11][12][13][14][15] These studies mainly focused on the electric-field-induced microcracking and intersection of domains in Pb͑Mg 1/3 Nb 2/3 ͒O 3 -PbTiO 3 single crystals and PbZr x Ti 1−x O 3 ceramics.…”

mentioning

confidence: 99%

In situ transmission electron microscopy study of electric-field-induced 90° domain switching in BaTiO3 single crystals

Qi¹,

Liu²,

Duan³

2006

Applied Physics Letters

View full text Add to dashboard Cite

The 90° domain switching in single crystalline BaTiO3 under an external static electric field has been investigated by in situ transmission electron microscopy using a special homemade transmission electron microscope stage. With the initial domains gradually disappearing, new domains that are 90° away from the initial ones are observed to occur with polarizations being switched to the direction of the external electric field, and domain boundaries being changed from ⟨101⟩ to ⟨1¯01⟩ in order to maintain a “head-to-tail” arrangement.

show abstract

“…In contrast, the atomic resolution afforded by contemporary aberration-corrected transmission electron microscopy (TEM) is ideal for characterizing crystalline defects and following the ferroelectric switching process in situ. There are, however, only a handful of TEM studies of ferroelectric domain switching in bulk crystals [14][15][16] . The direct characterization of ferroelectric switching in thin-film heterostructures is now possible with the recent integration of scanning probe and TEM 17,18 .…”

mentioning

confidence: 99%

Revealing the role of defects in ferroelectric switching with atomic resolution

et al. 2011

View full text Add to dashboard Cite

Ferroelectric materials are characterized by a spontaneous polarization, which can be reoriented with an applied electric field. The switching between polarized domains is mediated by nanoscale defects. understanding the role of defects in ferroelectric switching is critical for practical applications such as non-volatile memories. This is especially the case for ferroelectric nanostructures and thin films in which the entire switching volume is proximate to a defective surface. Here we report the nanoscale ferroelectric switching of a tetragonal PbZr 0.2 Ti 0.8 o 3 thin film under an applied electric field using in situ transmission electron microscopy. We found that the intrinsic electric fields formed at ferroelectric/electrode interfaces determine the nucleation sites and growth rates of ferroelectric domains and the orientation and mobility of domain walls, whereas dislocations exert a weak pinning force on domain wall motion.

show abstract

Electron microscopic studies of ferroelectric and ferroelastic Gd2(MoO4)3. IV. Polarization Reversal and Field Induced Phase Transformation

Cited by 20 publications

References 18 publications

Local Phenomena in Oxides by Advanced Scanning Probe Microscopy

Local Phenomena in Oxides by Advanced Scanning Probe Microscopy

In situ transmission electron microscopy study of electric-field-induced 90° domain switching in BaTiO3 single crystals

Revealing the role of defects in ferroelectric switching with atomic resolution

Contact Info

Product

Resources

About