Electron Mobility in Bulk n-Doped SiC-Polytypes 3C-SiC, 4H-SiC, and 6H-SiC: A Comparison

Abstract

This communication presents a comparative study on the charge transport (in transient and steady state) in bulk n-type doped SiC-polytypes: 3C-SiC, 4H-SiC and 6H-SiC. The time evolution of the basic macrovariables: the "electron drift velocity" and the "non-equilibrium temperature" are obtained theoretically by using a Non-Equilibrium Quantum Kinetic Theory, derived from the method of Nonequilibrium Statistical Operator (NSO). The dependence on the intensity and orientation of the applied electric field of this macrovariables and mobility are derived and analyzed. From the results obtained in this paper, the most attractive of these semiconductors for applications requiring greater electronic mobility is the polytype 4H-SiC with the electric field applied perpendicular to the c-axis.

Effect of TCS gas flow and pre-etching on homopitaxial growth of 4H-SiC

“…In the homogeneous epitaxial growth process of SiC, the mechanism of N atom doping competes for lattice positions with C atoms. 22 If the concentration of C elements in the gas increases, the competitive ability of N atoms with C atoms decreases, resulting in a decrease in doping concentration. With an increase in the concentration of source gas, the concentration of C atoms within the boundary layer increases.…”

Analysis of basic performance parameters and temperature effect of SiC-MOSFET

“…The mobility of electrons and holes is one of the most basic physical parameters, and the low mobility of the inversion layer is a significant shortcoming of SiC MOSFET, which greatly influences the device's performance [13].…”

“…There is much research on it. For example, WM Choi and HG Ahn studied SiC-based power semiconductor system[4], Zhi Peng Luo studied the annealing effects on the reliability and performance of SiC MOS capacitance[5], and Zhi Qiang Bai studied the effects of temperature storage on the threshold voltage stability of n-channel 4H-SiC VDMOSFET [13]. These studies are valuable but not comprehensive enough.…”