Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

Hospodková, A.; Hájek, František; Hubáček, Tomáš; Gedeonová, Zuzana; Hubı́k, P.; Mareš, Jiřı́ J.; Pangrác, J.; Dominec, Filip; Kuldová, K.; Hulicius, Eduard

doi:10.1016/j.jcrysgro.2022.127061

Cited by 3 publications

(1 citation statement)

References 27 publications

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“…First, contamination is enhanced in a hydrogen atmosphere for all studied contaminants, except hydrogen itself. Increased contamination of GaN layers in the hydrogen atmosphere is in agreement with refs , . Second, concentration of all studied contaminants is higher in HDD samples with exception of silicon contamination, which seems to be independent of dislocation density.…”

Section: Resultssupporting

confidence: 89%

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface

Hospodková

Hájek

Hubáček

et al. 2023

ACS Appl. Mater. Interfaces

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This work suggests new morphology for the AlGaN/GaN interface which enhances electron mobility in two-dimensional electron gas (2DEG) of high-electron mobility transistor (HEMT) structures. The widely used technology for the preparation of GaN channels in AlGaN/GaN HEMT transistors is growth at a high temperature of around 1000 °C in an H2 atmosphere. The main reason for these conditions is the aim to prepare an atomically flat epitaxial surface for the AlGaN/GaN interface and to achieve a layer with the lowest possible carbon concentration. In this work, we show that a smooth AlGaN/GaN interface is not necessary for high electron mobility in 2DEG. Surprisingly, when the high-temperature GaN channel layer is replaced by the layer grown at a temperature of 870 °C in an N2 atmosphere using TEGa as a precursor, the electron Hall mobility increases significantly. This unexpected behavior can be explained by a spatial separation of electrons by V-pits from the regions surrounding dislocation which contain increased concentration of point defects and impurities.

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Section: Resultssupporting

confidence: 89%

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface

Hospodková

Hájek

Hubáček

et al. 2023

ACS Appl. Mater. Interfaces

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SiC-based high electron mobility transistor

Sazawa,

Nakajima,

Kuboya

et al. 2024

Applied Physics Letters

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This paper describes the fabrication of a SiC-based high electron mobility transistor (HEMT). A single-crystal 3C–SiC layer was grown on a C-face 4H–SiC substrate, and 2D electron gas was induced at the 3C–SiC/4H–SiC heterointerface due to the unique polarization physics. The measured Hall mobility of the 2DEG was 586 cm2/V s at room temperature. Source, gate, and drain electrodes were fabricated on the 3C–SiC surface. The drain current for the fabricated SiC-HEMT was measured to be 47.5 mA/mm, and the transconductance was estimated to be 13.5 mS/mm.

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Quantum Channel Extreme Bandgap AlGaN HEMT

Shur,

Simin,

Hussain

et al. 2024

Micromachines

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An extreme bandgap Al0.64Ga0.36N quantum channel HEMT with Al0.87Ga0.13N top and back barriers, grown by MOCVD on a bulk AlN substrate, demonstrated a critical breakdown field of 11.37 MV/cm—higher than the 9.8 MV/cm expected for the channel’s Al0.64Ga0.36N material. We show that the fraction of this increase is due to the quantization of the 2D electron gas. The polarization field maintains electron quantization in the quantum channel even at low sheet densities, in contrast to conventional HEMT designs. An additional increase in the breakdown field is due to quantum-enabled real space transfer of energetic electrons into high-Al barrier layers in high electric fields. These results show the advantages of the quantum channel design for achieving record-high breakdown voltages and allowing for superior power HEMT devices.

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Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

Cited by 3 publications

References 27 publications

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface

SiC-based high electron mobility transistor

Quantum Channel Extreme Bandgap AlGaN HEMT

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