Electron mobility in heavily doped gallium arsenide due to scattering by potential fluctuations

Yanchev, Ivan; Arnaudov, B.; Evtimova, S.

doi:10.1088/0022-3719/12/19/005

Cited by 25 publications

(7 citation statements)

References 12 publications

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“…And, as is well known, there is no need to take into account the scattering like that. The necessity of consideration of the coherent scattering along with the noncoherent one arises only if there is a partial ordering in a spatial location of the ionized impurity atoms [15,35].…”

Section: Results Of Calculations and Discussionmentioning

confidence: 99%

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Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion

Pozdnyakov

2013

J Comput Electron

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As applied to the numerical simulation of electron transport and scattering processes in semiconductors an efficient model describing the scattering of electrons by the ionized impurities is proposed. On the example of GaAs at 77 and 300 K and Si at 300 K the dependencies of low-field electron mobility on the donor impurity concentration in the semiconductors are calculated in the framework of proposed model as well as in the framework of such most frequently used applied models as the Conwel-Weisskopf model and the Brooks-Herring one. After comparing the calculation results with the well-known experimental data it has been ascertained that the best agreement between the theory and experiment is achieved with application of the proposed model.

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Section: Results Of Calculations and Discussionmentioning

confidence: 99%

“…In Figs. 2 and 3 the experimental data are averaged EDRs for the measured values of electron mobility from [6,9,21,[33][34][35], and in Fig. 4 the experimental data are averaged EDRs for the measured values of electron mobility from [33,[36][37][38][39][40].…”

Section: Results Of Calculations and Discussionmentioning

confidence: 99%

Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion

Pozdnyakov

2013

J Comput Electron

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“…This is not the case for doped polar semiconductors. A long-standing discrepancy between theoretical and experimental mobility values for moderately to heavily doped n-type GaAs has been noted by many authors [2][3][4][5][6][7][8][9][10][11][12][13]. The fact that calculated mobilities are consistently too high, especially for moderate to heavy doping and low temperatures, has motivated suggestions that compensation effects [7], correlated impurity distributions [4,10], modifications of screening theory for a multi-ion system [3], or multiple scattering from ionized impurities [13] should be included to obtain accurate results.…”

Section: Introductionmentioning

confidence: 99%

Electron-electron interactions, coupled plasmon-phonon modes, and mobility inn-type GaAs

Sanborn

1995

Phys. Rev. B

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This paper investigates the mobility of electrons scattering from the coupled system of electrons and longitudinal optical (LO) phonons in n-type GaAs. The Boltzmann equation is solved exactly for low electric fields by an iterative method, including electron-electron and electron-LO phonon scattering dynamically screened in the random-phase-approximation (RPA). The LO phonon self-energy is treated in the plasmon-pole approximation. Scattering from ionized impurities screened in static RPA is calculated with phase-shift cross sections, and scattering from RPA screened deformation potential and piezoelectric acoustic phonons is included in the elastic approximation. The results show that dynamic screening and plasmon-phonon coupling significantly modify inelastic scattering at low temperatures and densities. The effect on mobility is obscured by ionized impurity scattering in conventionally doped material, but should be important in modulation doped structures. For uncompensated bulk n-type GaAs, the RPA phase-shift model for electron-impurity scattering gives lower drift mobilities than the standard Thomas-Fermi or Born calculations which are high compared to experiment. Electron-electron scattering lowers the mobility further, giving improved agreement with experiment though discrepancies persist at high donor concentrations (n > 10 18 cm −3 ). When impurities are ignored, inelastic scattering from the coupled electron-phonon system is the strongest scattering mechanism at 77 K for moderate doping. This result differs from the standard model neglecting mode coupling and electron-electron scattering which has the acoustic modes dominant in this regime.

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“…R o may be evaluated using the model proposed by Yanchev et al [34] where the screening length from ionized impurities is approximated by a Thomas-Fermi screening length presented in equation (A.12). The ionized impurity screening length depends on a phenomenological temperature T 0 .…”

Section: * mentioning

confidence: 99%

Semiconductors for high selectivity thermal emitters

Doiron

Naik

2018

J. Opt.

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Selective emitters limit thermal radiation to a narrow spectral band enabling applications including energy conversion and sensing. While applications demand high spectral selectivity, the materials used for selective emitters limit the ultimate selectivity. At high temperatures (>600 K), the optical properties of materials degrade, resulting in poor spectral selectivity, and thus leaving an open question—what material platform makes a good selective thermal emitter? Here, we show that doped semiconductors make a good choice by predicting their temperature dependent optical constants in a wide doping range. We build semi-empirical models to predict the temperature dependences of microscopic processes in GaAs and Si, a polar and a non-polar semiconductor respectively, and demonstrate that semiconductors with small and tunable optical losses enable very high spectral selectivity in thermal emitters. Our predictions agree reasonably well with more complex and accurate methods such as variational and second order perturbation theories, and serve as a guide in the discovery and development of materials for high temperature nanophotonics.

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Electron mobility in heavily doped gallium arsenide due to scattering by potential fluctuations

Cited by 25 publications

References 12 publications

Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion

Scattering of electrons by ionized impurities in semiconductors: quantum-mechanical approach to third body exclusion

Electron-electron interactions, coupled plasmon-phonon modes, and mobility inn-type GaAs

Semiconductors for high selectivity thermal emitters

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