A theory of the temperature and concentration dependence of the impurity conduction in low compensated semiconductors is presented. For the activation energy the expression c3 = 0.99 (ez/ix) N g 3 (1 -0.43 v K114) is derived, where N U is the majority impurity concentration, K is the degree of compensation, and v is a numerical factor whose value is likely to be about 0.7. This expression essentially differs from the well known result of Miller and Abrahams. It is shown that the above dependence i s i n good agreement with available experimental data.

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The hopping conductivity in heavily doped and closely compensated LPE gallium arsenide is investigated in the temperature range 4.2 to 250 K. It is found that the resistivity in n-type samples