Hopping conductivity in heavily doped strongly compensated GaAs

Arnaudov, B.; Доманевский, Д. С.; Yanchev, Ivan

doi:10.1002/pssb.2220910135

Cited by 10 publications

(5 citation statements)

References 12 publications

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“…The obtained linear In u -T-112 law over about 2.5 orders of magnitude in temperature variation and more than three orders of magnitude of variation in conductivity is interpreted in the frame of a Coulomb gap with vanishing density of states a t the Fermi level, as predicted by Efros and Shklovskii. The preexponential factor eo = uK1 shows also scaling behaviour according to eo = ez(1n/nc)1.2*0 4 and a value of Q$ = 2.2 R cm. At n + nc co = ecl reaches the value of Mott's minimal metallic conductivity of U*ID.I~ = (Cezlh) nE13, with 0.025 5 C j 0.05.…”

mentioning

confidence: 89%

Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

Rentzsch¹,

Friedland²,

Ionov

et al. 1986

Physica Status Solidi (b)

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R. R.ENTZSCH e t al. : Hopping in Keutron-Transmutatim-Doped Gallium Arsenide 691 phys. stat. sol. (b) 137, 691 (1986) First investigations are reported on the temperature dependence of the dc-conductivity a t T = = 0.05 to 300 K on neutron-transmutation-doped (NTD) n-GaAs in the vicinity of the metalinsulator transition (MIT). At a medium compensation of K = 0.60 to 0.77 the MIT takes place a t the critical electron concentration of nc = 2.3 X lOla ~m -~. On the dielectric side of the MIT in the variable-range hopping regime (VRH) a t T 5 10 K the conductivity obeys the equation

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mentioning

confidence: 89%

Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

Rentzsch¹,

Friedland²,

Ionov

et al. 1986

Physica Status Solidi (b)

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“…This is due to problems for the preparation of strongly and completely compensated semiconductors with high level of doping when Na 3 ӷ 1, where N is the impurity concentration and a is the Bohr radius. Moreover, some experimental studies were performed on wide-bandgap HDSC semiconductors, for example, GaAs, [8][9][10] in which may exist correlation in distribution of impurities. It is well known 6 that the amplitude and spatial size of potential relief in HDSC semiconductors may have a strong dependence on correlation in the impurity distribution, which reduces the potential fluctuations.…”

Section: Introductionmentioning

confidence: 99%

“…7 There have been numerous works, both theoretical and experimental, to investigate the influence of electrostatic potential fluctuations, formed by correlated and uncorrelated distributions of impurities, on the electrical and optical properties of various single-crystalline semiconductors. [6][7][8][9][10][11][12][13][14][15][16] However, the problem is quite complex, and there still remain a number of major theoretical and experimental challenges. Besides, there are no sufficiently experimental works on heavily doped semiconductors with very high degree of compensation, in particular, fully compensated.…”

Section: Introductionmentioning

confidence: 99%

Preparation and properties of heavily doped and strongly compensated Ge films on GaAs

Mitin

2010

Journal of Applied Physics

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We present and generalize the preparation conditions and properties of heavily doped and strongly compensated (HDSC) Ge films obtained by deposition in the vacuum onto the semi-insulating GaAs (100) substrates. A possibility of formation of Ge films with various doping levels and compensation degrees (in particular, fully compensated) is demonstrated. Heavily doped and fully compensated Ge single-crystalline thin (∼0.1 μm) films obtained have high resistivity (up to 140 Ω cm), conductance activation energy as high as half the bandgap of Ge, low free charge carrier mobility (∼50 cm2/V s), and concentration (∼1014–1015 cm−3). The electrical and optical properties of the films are explained with allowance made for the presence of large-scale fluctuations of electrostatic potential in Ge. Under certain conditions, a two-dimensional potential relief may exist in thin HDSC Ge films, as well as two-dimensional percolation may occur.

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“…In the present study, the Hubbard‐band model is now used for analyzing the data on n ‐GaAs samples. While the impurity conduction in strongly compensated n ‐GaAs has been studied extensively, much less studies have been performed on weakly compensated n ‐GaAs. On the other hand, it is suggested that, in weakly compensated case, since σ 3 is small, impurity conduction will be dominated by the ϵ 2 process.…”

Section: Introductionmentioning

confidence: 99%

Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n‐GaAs

Kajikawa

2018

Physica Status Solidi (b)

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A Hubbard-band model is used for analyzing the low-temperature data of Hall-effect measurements on weakly compensated n-GaAs samples with donor concentrations N D less than 10 16 cm À3 . In the model, not only the bottom Hubbard band formed from the neutral donor states but also the top Hubbard band formed from the negatively charged donor states is taken into account. Nearest-neighbor hopping (NNH) or Efros-Shklovskii (ES) variablerange hopping (VRH) is assumed for conduction in the bottom Hubbard band, depending on N D , while NNH is assumed for conduction in the top Hubbard band. For the sample with N D ¼ 1.3 Â 10 15 cm À3 , it is shown that the Hall mobility is dominated by NNH in the top Hubbard band in the temperature range of 4-15 K while it is dominated by NNH in the bottom Hubbard band below 3 K. For this sample, it is also shown that the absolute value of the Hall coefficient is dominated by the contribution from the top Hubbard band around its peak at 4.4 K. For the samples with N D in the range of 2.7-9 Â 10 15 cm À3 , on the other hand, it is shown that there hardly exists the temperature range in which the conduction in the top Hubbard band dominates.

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Hopping conductivity in heavily doped strongly compensated GaAs

Abstract: The hopping conductivity in heavily doped and closely compensated LPE gallium arsenide is investigated in the temperature range 4.2 to 250 K. It is found that the resistivity in n-type samples

Cited by 10 publications

References 12 publications

Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

Variable‐Range Hopping in Neutron‐Transmutation‐Doped Gallium Arsenide

Preparation and properties of heavily doped and strongly compensated Ge films on GaAs

Reappraisal of Conduction and Hall Effect Due to Impurity Hubbard Bands in Weakly Compensated n‐GaAs

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