Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Sun, Shiyu; Plummer, J.D.

doi:10.1109/t-ed.1980.20063

Cited by 627 publications

(112 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The carrier mobility in 2D gases is found to depend in a universal way on this gate field, according to the so-called universal mobility model. This idea developed from observations by Sah, Plummer [119] and others. The most recent version is by Takagi et al [120] in which the mobility of electrons and holes depends only on the effective gate field and the Si face, [100], [110] or [111].…”

Section: Mobility Degradationmentioning

confidence: 99%

High dielectric constant oxides

Robertson

2004

Eur. Phys. J. Appl. Phys.

1,562

828

View full text Add to dashboard Cite

Abstract. The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or 'high K' gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior electronic properties to SiO2, such as a tendency to crystallise and a high concentration of electronic defects. Intensive research is underway to develop these oxides into new high quality electronic materials. This review covers the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects. The use of high K oxides in capacitors of dynamic random access memories is also covered. PACS

show abstract

Section: Mobility Degradationmentioning

confidence: 99%

High dielectric constant oxides

Robertson

2004

Eur. Phys. J. Appl. Phys.

1,562

828

View full text Add to dashboard Cite

show abstract

“…The extraction and physical modelling of the inversion layer mobility has attracted a lot of attention in the past two decades, both at room temperature [42] and at cryogenic T [43]- [Sl]. At room temperature, the effective mobility peff.…”

Section: Effective Mobility At Moderate Transverse Electric Fieldmentioning

confidence: 99%

Parameter Extraction of MOSFETs Operated at Low Temperature

Simoen

Claeys

Martino³

1996

J. Phys. IV France

View full text Add to dashboard Cite

Abstract. In this paper, an overview is given of the methods for practical parameter extraction for MOSFETs operated at cryogenic temperatures. The methods considered are based on the input characteristics of the device, from which the charge threshold voltage, the subthreshold slope, the effective mobility, the series resistance and the effective gate length is derived. Whenever possible, the physical basis of the mostly semi-empirical methods will be outlined. Finally, pitfalls and problems, related to low temperature MOSFET characterisation, like transient and freeze-out effects, self-heating, etc, are briefly discussed.

show abstract

“…Recently, the inversion-layer mobility has come to be explained in terms of the scattering theory for the 2D carrier gas [2][3][4][5][6], even at room temperature. Figure 2 shows the experimental relationship between electron mobility on (100) and the Figure 2, has been verified experimentally over a wide range ofthe substrate impurity concentration for n-and pMOSFETs [7][8][9][10][11] fabricated on several surface orientations [12]. The [15] and B [16]) is higher than that of the experimental one and the calculated temperature dependence is weaker than the experimental one.…”

Section: Low Field Mobilitymentioning

confidence: 69%

Two‐dimensional Carrier Transport in Si MOSFETs

Takagi

1998

VLSI Design

View full text Add to dashboard Cite

The importance of 2-dimensional (2D) features of carriers in Si MOSFETs on the device performance is re-examined experimentally and theoretically from the viewpoint of lowfield mobility, velocity in high tangential fields and the inversion-layer capacitance. It is confirmed that low-field mobility and inversion-layer capacitance can be understood well in terms of the 2D subbands and the 2D carrier transport. In order to obtain fullyquantitative understanding of low-field mobility, however, it is still necessary to more accurately determine the amount of the scattering parameters in the inversion layer. On the other hand, saturation velocity is considered to be less influenced by the 2D quantization, while it is found experimentally that saturation velocity is slightly dependent on surface carrier concentration.According to the knowledge of 2-dimensional carrier transport in Si inversion layer, an effective way to have higher current drive is to increase the occupancy of the 2-fold valleys, which have lower conductivity mass, on a (100) surface. From this viewpoint, two device structures, strained Si MOSFETs and SOI MOSFETs with ultra-thin SOI films, are introduced and the behavior of low-field mobility is analyzed through the calculations of the subband structures and phonon-limited mobility.

show abstract

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Cited by 627 publications

References 31 publications

High dielectric constant oxides

High dielectric constant oxides

Parameter Extraction of MOSFETs Operated at Low Temperature

Two‐dimensional Carrier Transport in Si MOSFETs

Contact Info

Product

Resources

About