Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

Comès, R.; Gu, Man; Khokhlov, M. Z.; Liu, Hongxue; Lu, Jiwei; Wolf, Stuart A.

doi:10.1063/1.4774238

Cited by 18 publications

(13 citation statements)

References 45 publications

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“…1b also confirmed coherent growth of the SVO thin films with thicknesses up to 25 nm (~65 ML). The growth of SVO films on LSAT substrates was carried out using a layer-by-layer growth mode, 24 giving it a small lattice mismatch of -0.65%. In Fig.…”

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confidence: 99%

Two‐Dimensional Mott Insulators in SrVO₃ Ultrathin Films

Wolf

2014

Adv Materials Inter

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High-quality epitaxial SrVO 3 (SVO) thin films of various thicknesses were grown on (001)oriented LSAT substrates by pulsed electron-beam deposition technique. Thick SVO films (~25 nm) exhibited metallic behavior with the electrical resistivity following the T 2 law corresponding to a Fermi liquid system. We observed a temperature driven metal-insulator transition (MIT) in SVO ultrathin films with thicknesses below 6.5 nm, the transition temperature T MIT was found to be at 50 K for the 6.5 nm film, 120 K for the 5.7 nm film and 205 K for the 3 nm film. The emergence of the observed MIT can be attributed to the dimensional crossover from a threedimensional metal to a two-dimensional Mott insulator, as the resulting reduction in the effective bandwidth W opens a band gap at the Fermi level. The magneto-transport study of the SVO ultrathin films also confirmed the observed MIT is due to the electron-electron interactions other than localization. 3 The metal-insulator transition (MIT) in 3d transition metal oxides (TMO) has been a topic of long-standing interest in condensed matter physics. 1 Materials undergo a purely electronic MIT without structural changes are of particular interest, the basic mechanisms include Mott transition 2,3 and Anderson localization 4 , which are based on electron-electron interactions and disorder-induced electron localization, respectively. Although the two routes can both separately induce a MIT, disorder is inevitably present in realistic strongly correlated systems, the subtle interplay of electron correlation and localization effects makes it challenging to determine the dominant driving force behind the transition. 5,6 Searching for new systems exhibit MITs and unraveling the transition mechanisms will open new avenues to predict, understand and control MIT, which could potentially impact the emerging field of oxide electronics. 7 SrVO 3 (SVO) with a 3d 1 electronic configuration for vanadium is a typical strongly correlated system for studying MIT. SVO crystallizes in a cubic perovskite structure with a lattice constant of 3.843 Å. 8 Bulk SVO has been reported to be on the metallic side of a MIT with electrical resistivity ranging from 10 -5 to 10 -3 Ωcm at room temperature. 8,9,10,11 According to the Hubbard model, the control parameters for a Mott transition can be classified into bandwidth control and band-filling control. 1 In the bandwidth-controlled MIT (BC-MIT), the system is determined by the competition between the on-site Coulomb repulsion U (localizes the electron), and the one-electron bandwidth W (the tendency of electrons to delocalize), when U/W is beyond a critical value, the system becomes a Mott insulator. In the filling controlled MIT (FC-MIT), the chemical doping of a Mott insulator with a half-filled band (filling n = 1) results in non-integer n and a transition to a metal. Most previous studies of MIT in bulk SVO were achieved by chemical substitution. It has been demonstrated that a FC-MIT can be induced in the La 1-x Sr x VO 3 system via aliovalent A-site ...

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Two‐Dimensional Mott Insulators in SrVO₃ Ultrathin Films

Wolf

2014

Adv Materials Inter

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“…These islands were likely formed during the strain relaxation process, and the clear cross-hatched patterns seen in the microscope image in Fig. 3.7(b) supports this explanation[73].Fig. 3.7Nomarski microscope images of Ga0.66In0.34P initiated on Si0.29Ge0.71 samples with a growth rate of (a) 0.9 µm/min, and (b)1.6 µm/min.…”

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Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

Wang¹

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“…23,24 The system is equipped with two electron guns, which are used to separately ablate a Bi1.15FeO3 and CoFe2O4 target for film growth. To produce a template substrate, an initial uniform CFO film was grown epitaxially on Nb:STO.…”

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Microstructural effects of chemical island templating in patterned matrix-pillar oxide nanocomposites

Comès

Siebein

et al. 2015

CrystEngComm

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The ability to pattern the location of pillars in epitaxial matrix -pillar nanocomposites is a key challenge to develop future technologies using these intriguing materials. One such model system employs a ferrimagnetic CoFe2O4 (CFO) pillar embedded in a ferroelectric BiFeO3 (BFO) matrix, which has been proposed as a possible memory or logic system. These composites self-assemble spontaneousl y with pillars forming through nucleation at a random location when grown via physical vapor deposition. Recent results have shown that if an island of the pillar material is pre-patterned on the substrate, it is possible to control the nucleation process and determine the locations where pillars form. In this work, we employ electron microscopy and xray diffraction to examine the chemical composition and microstructure of patterned CFO -BFO nanocomposites. Cross-sectional transmission electron microscopy is used to examine the nucleation effects at the interface between the template island and resulting pillar. Evidence of grain boundaries and lattice tilting in the templated pillars is also presented and attributed to the microstructure of the seed island.

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Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

Cited by 18 publications

References 45 publications

Two‐Dimensional Mott Insulators in SrVO₃ Ultrathin Films

Two‐Dimensional Mott Insulators in SrVO₃ Ultrathin Films

Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

Microstructural effects of chemical island templating in patterned matrix-pillar oxide nanocomposites

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Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

Cited by 18 publications

References 45 publications

Two‐Dimensional Mott Insulators in SrVO3 Ultrathin Films

Two‐Dimensional Mott Insulators in SrVO3 Ultrathin Films

Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

Microstructural effects of chemical island templating in patterned matrix-pillar oxide nanocomposites

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Product

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Two‐Dimensional Mott Insulators in SrVO₃ Ultrathin Films

Two‐Dimensional Mott Insulators in SrVO₃ Ultrathin Films