Electron multibeam technology for mask and wafer writing at 0.1 nm address grid

Platzgummer, Elmar; Klein, Claude; Loeschner, Hans

doi:10.1117/1.jmm.12.3.031108

Cited by 43 publications

(16 citation statements)

References 13 publications

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“…However, substantial exposure doses from tens to several thousands of μC/cm 2 must be accumulated depending on the resists used and the process itself. At the moment, low-current serial exposures bring throughput limitations to EBL and FIB patterning; nonetheless, multibeam systems are being developed to overcome these constrains and to offer highresolution large-area exposures within reasonable timeframes [30,31].…”

Section: Limits Of Materials Modification/damagementioning

confidence: 99%

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

et al. 2017

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The evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM), focused ion beam (FIB) milling/imaging, and atomic force microscopy (AFM). Fabrication and in situ imaging of materials undergoing a three-dimensional (3D) nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/ nano-fluidics and/or photonics) within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented.

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Section: Limits Of Materials Modification/damagementioning

confidence: 99%

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

et al. 2017

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“…Even so, we expect that mask-writing technology will improve dramatically through the use of multibeam mask writers. [27][28][29] …”

Section: Discussionmentioning

confidence: 99%

Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake

Miyoshi¹,

Taniguchi

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors have developed a high-resolution technique for fabricating photomasks at the 10-nm halfpitch logic nodes and beyond. Current mask-manufacturing techniques use a chemically amplified resist (CAR) that has a complex mechanism of acid generation, complicating the criteria for selecting the polymer and the quencher for industrial purposes. Thus, it is important to study fabricating masks with non-CARs. The authors exposed a non-CAR, diluted ZEP520A, to variable-shaped electronbeam lithography and used a postexposure bake (PEB) to modify the resist. Studying how the PEB temperature affected the non-CAR and resultant masks, the authors demonstrate that their technique can produce high-resolution structures. By measuring the critical dimensions (CDs), the authors show that the PEB shrunk, enlarged, and retained the size of 1:1 line-and-space, isolated space, and isolated line patterns, respectively. By optimizing the PEB temperature, the authors improved the line-edge roughness (LER) of the 1:1 line-and-space and isolated space CDs by $40%. To understand how the PEB affected the resultant structures, the authors measured the hardness of cured resists with and without a PEB at various temperatures. Optimizing the PEB temperature of the non-CAR increased the resist contrast, annealing the resist and improving the LER. As such, their technique is capable of high resolutions on the order of 20 nm. The insights the authors gained from optimizing the PEB might be useful when fabricating next-generation masks.

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“…To make direct write practicable for wafers, significant developments in productivity will be required. In recent years, some progresses have been reported including MAPPER (a 5 kV raster wafer writer) [44], IMS (50 kV raster mask writer, single source, many spots in single lens field) [45] and multibeam wafer writer [46]. These are the promising solutions in exposure cost reduction for 20-nm half pitch and beyond.…”

Section: Status and Challengesmentioning

confidence: 99%

Promising Lithography Techniques for Next-Generation Logic Devices

2018

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Continuous rapid shrinking of feature size made the authorities to seek alternative patterning methods as the conventional photolithography comes with its intrinsic resolution limit. In this regard, some promising techniques have been proposed as next-generation lithography (NGL) that has the potentials to achieve both high-volume production and very high resolution. This article reviews the promising NGL techniques and introduces the challenges and a perspective on future directions of the NGL techniques. Extreme ultraviolet lithography (EUVL) is considered as the main candidate for sub-10-nm manufacturing, and it could potentially meet the current requirements of the industry. Remarkable progress in EUVL has been made and the tools will be available for commercial operation soon. Maskless lithography techniques are used for patterning in R&D, mask/mold fabrication and low-volume chip design. Directed self-assembly has already been realized in laboratory and further effort will be needed to make it as NGL solution. Nanoimprint lithography has emerged attractively due to its simple process steps, high throughput, high resolution and low cost and become one of the commercial platforms for nanofabrication. However, a number of challenging issues are waiting ahead, and further technological progresses are required to make the techniques significant and reliable to meet the current demand. Finally, a comparative study is presented among these techniques.

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Electron multibeam technology for mask and wafer writing at 0.1 nm address grid

Cited by 43 publications

References 13 publications

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

Fabricating a high-resolution mask with improved line-edge roughness by using a nonchemically amplified resist and a postexposure bake

Promising Lithography Techniques for Next-Generation Logic Devices

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