Electron-optics method for high-throughput in a SCALPEL system: Preliminary analysis

Waskiewicz, W. K.; Harriott, L. R.; Liddle, J. Alexander; Stanton, Stuart T.; Berger, S. D.; Munro, Eric; Zhu, Xiwen

doi:10.1016/s0167-9317(98)00049-5

Cited by 6 publications

(3 citation statements)

References 1 publication

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“…Subsequent mask stripes are stitched back together at the wafer plane using an electrostatic deflector. Masks which consist of a 1500 A thick silicon nitride membrane supporting patterns of 250 A thick tungsten were used in all SCALPEL exposures [5].…”

Section: Methodsmentioning

confidence: 99%

New Developments in Resist Materials for the SCALPEL Technology

Novembre

Ocola

Houlihan

et al. 1998

J. Photopol. Sci. Technol.

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A series of commercially viable positive and negative acting chemically amplified resists developed for 193 nm and 248 nm lithographies have been investigated for use in the SCALPEL technology. The investigation focused on determining the compatibility of these materials to the operating conditions and writing strategy of the exposure tool. The resist systems investigated included the deep-UV positive acting chemically amplified resist ARCH produced by Olin Microelectronics Materials (0MM), the negative acting material NEB 22A made available by Sumitomo and a 193 nm sensitive positive tone system being developed by Lucent and OMM. The extent to which these materials exhibited volatilization in the tool during exposure determined there compatibility. Those materials characterized by having a high activation energy for the acid catalyzed deprotection process and use of acid molecules which are stable at temperatures in the 40-50 °C range were viewed as compatible with the SCALPEL exposure system. For the resists investigated the sensitivity @ 100 KV ranged from 10-30 ii C/cm ` . 80-100 nm line and space pattern resolution was routinely observed and process latitude in excess of 20 % for features 0.20 u m was measured.

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Section: Methodsmentioning

confidence: 99%

New Developments in Resist Materials for the SCALPEL Technology

Novembre

Ocola

Houlihan

et al. 1998

J. Photopol. Sci. Technol.

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“…Stochastic blurring is the irreversible loss of image information encoded in an electron pulse via random scattering of electrons [19,20], as illustrated in Figure 3 and will be discussed in Section 3.3.…”

Section: Practical Resolution Limitsmentioning

confidence: 99%

Practical considerations for high spatial and temporal resolution dynamic transmission electron microscopy

et al. 2007

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Although recent years have seen significant advances in the spatial resolution possible in the transmission electron microscope (TEM), the temporal resolution of most microscopes is limited to video rate at best. This lack of temporal resolution means that our understanding of dynamic processes in materials is extremely limited. High temporal resolution in the TEM can be achieved, however, by replacing the normal thermionic or field emission source with a photoemission source. In this case the temporal resolution is limited only by the ability to create a short pulse of photoexcited electrons in the source, and this can be as short as a few femtoseconds. The operation of the photo-emission source and the control of the subsequent pulse of electrons (containing as many as 5 x 10 7 electrons) create significant challenges for a standard microscope column that is designed to operate with a single electron in the column at any one time. In this paper, the generation and control of electron pulses in the TEM to obtain a temporal resolution <10-6 s will be described and the effect of the pulse duration and current density on the spatial resolution of the instrument will be examined. The potential of these levels of temporal and spatial resolution for the study of dynamic materials processes will also be discussed.

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“…For example, the 8-C/cm 2 dose required to expose ZEP at 10 kV would increase by more than five times in the move to a 50-kV system, where the dose required would be ϳ40 C/cm 2 . Increased electron absorption by the quartz substrate can in turn lead to significant heating of the mask [26] during e-beam exposure, causing CD errors. Therefore, higher-sensitivity resists are needed to reduce the amount of beam heating and increase the mask fabrication throughput of the vector-scan tools.…”

Section: Electron-beam Resists For Mask-making: a Brief Historymentioning

confidence: 99%

Recent progress in electron-beam resists for advanced mask-making

et al. 2001

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Resists for advanced mask-making with highvoltage electron-beam writing tools have undergone dramatic changes over the last three decades. From PMMA and the other early chain-scission resists for micron dimensions to the aqueous-base-developable, dry-etchable chemically amplified systems being developed today, careful tuning of the chemistry and processing conditions of these resist systems has allowed the patterning of photomasks of increasing complexity containing increasingly finer features. Most recently, our research efforts have been focused on a low-activation-energy chemically amplified resist based on ketal-protected poly(hydroxystyrene). These ketal resist systems, or KRSs, have undergone a series of optimization and evaluation cycles in order to fine-tune their performance for advanced mask-fabrication applications using the 75-kV IBM EL4؉ vector scan e-beam exposure system. The experiments have led to an optimized formulation, KRS-XE, that exhibits superior lithographic performance and has a high level of processing robustness. In addition, we describe advanced formulations of KRS-XE incorporating organometallic species, which have shown superior dry-etch resistance to novolak-based resists in the Cr etch process while maintaining excellent lithographic performance. Finally, current challenges facing the implementation of a chemically amplified resist in the photomask manufacturing process are outlined, along with current approaches being pursued to extend the capabilities of KRS technology.

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Electron-optics method for high-throughput in a SCALPEL system: Preliminary analysis

Cited by 6 publications

References 1 publication

New Developments in Resist Materials for the SCALPEL Technology

New Developments in Resist Materials for the SCALPEL Technology

Practical considerations for high spatial and temporal resolution dynamic transmission electron microscopy

Recent progress in electron-beam resists for advanced mask-making

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