Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon

Barklie, R.C.; O'Raifeartaigh, Cormac

doi:10.1088/0953-8984/17/22/024

Cited by 3 publications

(5 citation statements)

References 25 publications

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“…The saturation behavior is also reflected in optical characterizations. Considering these results and putting them in perspective with other experimental results 17,19,20,37,38 and simulations 12,14,15 obtained for c-Si leads us to conclude that the annealing of implanted ͑and dynamically annealed͒ crystalline silicon is dominated, at least in its initial stages, by the relaxation and the annealing of damage zones that are structurally very similar if not identical to a-Si. This also applies to the primary knock-ons of a few kiloelectron volts generated by light, high-energy ions.…”

Section: Discussionsupporting

confidence: 53%

“…From the experimental point of view, Barklie and O'Raifeartaigh 37 recently performed electron paramagnetic resonance ͑EPR͒ measurements on ion-implanted Si and suggested that a broad line in the signal, overlooked in previous investigations, is related to these amorphous pockets. They show that these defects are already present after low-fluence implantation and in much larger concentration than other, simpler PD, at least for heavy ion or lower energy ion implantation.…”

Section: B General Discussionmentioning

confidence: 99%

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Damage evolution in low-energy ion implanted silicon

et al. 2007

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The annealing of damage generated by low-energy ion implantation in polycrystalline silicon ͑poly-Si͒ and amorphous silicon ͑a-Si͒ is compared. The rate of heat release between implantation temperature and 350-500°C for Si implanted in both materials and for different ions implanted in poly-Si shows a very similar shape, namely, a featureless signal that is characteristic of a series of processes continuously distributed in terms of activation energy. Nanocalorimetry signals differ only by their amplitude, a smaller amount of heat being released after light ion implantation compared to heavier ones for the same nominal number of displaced atoms. This shows the importance of dynamic annealing of the damage generated by light ions. A smaller amount of heat is released by implanted poly-Si compared to a-Si, underlining the effect of the surrounding crystal on the dynamic annealing and the relaxation of the defects. Damage accumulation after 30-keV Si implantation is also characterized by Raman scattering and reflectometry, featuring a similar trend in a-Si, poly-Si, and monocrystalline silicon ͑c-Si͒ with a saturation around 4 Si/ nm 2. Considering these results together with other recent experiments in c-Si and molecular dynamic simulations, it is concluded that the damage generated by low-energy ion implantation that survives dynamic annealing is structurally very similar if not identical in both crystalline and amorphous silicon, giving rise to the same kind of processes during a thermal anneal. However, the damage peak obtained by channeling saturates only above 10 Si/ nm 2. This suggests that between 4 and 10 Si/ nm 2 , further damage occurs by structural transformation without the addition of more stored energy.

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Section: Discussionsupporting

confidence: 53%

Section: B General Discussionmentioning

confidence: 99%

Damage evolution in low-energy ion implanted silicon

et al. 2007

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“…The study of defects formed in silicon by ion implantation has been a major research issue for many years [1][2][3]. Since silicon remains the key material of semiconductor device manufacturing, this area of study continues to be important, especially in relation to integration of electronics and spintronics on a single wafer.…”

Section: Introductionmentioning

confidence: 99%

Magnetization Peculiarities of Defects in Silicon Produced by Ni+, Co+, Fe+ Ion Implantation

Karabko

Достанко

Лапчук

et al. 2011

AMR

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Silicon p-type (100) wafers implanted with Ni, Co, Fe ions to a dose range of 3∙1013–3∙1016 cm-2 have been investigated by means of EPR. The g-factor from dangling bonds of silicon modified by Ni, Co, Fe ion implantation is found to be different from the g-factor of amorphous silicon explained by the change of the local magnetic permeability r. Extreme character of the spin concentration on dose dependence is found, being not typical for silicon.

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“…Electron paramagnetic resonance (EPR) is the characterization method for the identification of the dopants and defects created during the implantation process and the investigation of their microscopic structure 1,2 . However, conventional EPR measurements can usually only be performed on samples implanted with relatively high ion energies and ion doses to get the necessary number of defects.…”

mentioning

confidence: 99%

“…In the fabrication of semiconductor devices, ion implantation is widely used to create thin layers doped with different impurities for the realization of, e.g., pn junctions or ohmic contacts. Electron paramagnetic resonance (EPR) is the characterization method for the identification of the dopants and defects created during the implantation process and the investigation of their microscopic structure 1,2 . However, conventional EPR measurements can usually only be performed on samples implanted with relatively high ion energies and ion doses to get the necessary number of defects.…”

mentioning

confidence: 99%

Spin-dependent recombination at arsenic donors in ion-implanted silicon

Franke

Otsuka

Matsuoka

et al. 2014

Applied Physics Letters

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Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance in particular of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where high-fieldforbidden transitions between the magnetic substates can be observed due to the mixing of electron and nuclear spin states. Several implantation-induced defects are present in the samples studied and act as spin readout partner. We explicitly demonstrate this by electrically detected electron double resonance experiments and identify a pair recombination of close pairs formed by As donors and oxygen-vacancy centers in an excited triplet state (SL1) as the dominant spin-dependent process in As-implanted Czochralski-grown Si.In the fabrication of semiconductor devices, ion implantation is widely used to create thin layers doped with different impurities for the realization of, e.g., pn junctions or ohmic contacts. Electron paramagnetic resonance (EPR) is the characterization method for the identification of the dopants and defects created during the implantation process and the investigation of their microscopic structure 1,2 . However, conventional EPR measurements can usually only be performed on samples implanted with relatively high ion energies and ion doses to get the necessary number of defects. One possibility to enhance the sensitivity of EPR measurements is the detection of spin-dependent conductivity (SDC) in methods such as electrically detected magnetic resonance (EDMR) 3-5 or spin-dependent recombination (SDR) 6 . Indeed, using both experimental approaches, dopants and defects after low dose low energy implantation have been studied succesfully. SDR, where EPR spectra are detected by measuring the microwave reflectivity of the sample, has been applied to, e.g., the investigation of defects after implantation of hydrogen 7 and bismuth 8 . In EDMR, where samples are equipped with electrical contacts to observe SDC by monitoring the DC photoconductivity, as few as 50 phosphorus donors could be detected, implanted at an energy of 14 keV (Ref. 9). Using single electron transistors for detection, the electron and nuclear spin state even of single low-energy-implanted phosphorus donors in Si can be measured 10 . In addition to the higher sensitivity when compared to conventional EPR, a specific feature of all SDC-based mechanisms is the weak dependence of the resonance line intensities on the strength of the external magnetic field 11-13 . This allows to observe EPR spectra at weak magnetic fields and a) Electronic mail: david.franke@wsi.tum.de low resonance frequencies without a loss of sensitivity 14 . A particular benefit of this is the possibility to extend EPR experiments into a regime ...

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Electron paramagnetic resonance characterization of defects produced by ion implantation into silicon

Cited by 3 publications

References 25 publications

Damage evolution in low-energy ion implanted silicon

Damage evolution in low-energy ion implanted silicon

Magnetization Peculiarities of Defects in Silicon Produced by Ni<sup>+</sup>, Co<sup>+</sup>, Fe<sup>+</sup> Ion Implantation

Spin-dependent recombination at arsenic donors in ion-implanted silicon

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