2014
DOI: 10.1063/1.4896287
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Spin-dependent recombination at arsenic donors in ion-implanted silicon

Abstract: Spin-dependent transport processes in thin near-surface doping regions created by low energy ion implantation of arsenic in silicon are detected by two methods, spin-dependent recombination (SDR) using microwave photoconductivity and electrically detected magnetic resonance (EDMR) monitoring the DC current through the sample. The high sensitivity of these techniques allows the observation of the magnetic resonance in particular of As in weak magnetic fields and at low resonance frequencies (40-1200 MHz), where… Show more

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Cited by 8 publications
(7 citation statements)
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“…Applying the SDR-ESR detection scheme, photoexcited spin-triplet (S ¼ 1) defects in irradiated silicon 11,12 and in ion implanted layers has been observed. [13][14][15] In the previous investigations, we reported the observation of two new ESR spectra of surface centers using the SDR-ESR method: the P m center (spin S ¼ 1/2) 16 and KU1 (spin S ¼ 1). 17 Both defects have orthorhombic C 2v symmetry and exist in the Si/SiO 2 interfaces of commercially available Si (001) wafers.…”
Section: Introductionmentioning
confidence: 99%
“…Applying the SDR-ESR detection scheme, photoexcited spin-triplet (S ¼ 1) defects in irradiated silicon 11,12 and in ion implanted layers has been observed. [13][14][15] In the previous investigations, we reported the observation of two new ESR spectra of surface centers using the SDR-ESR method: the P m center (spin S ¼ 1/2) 16 and KU1 (spin S ¼ 1). 17 Both defects have orthorhombic C 2v symmetry and exist in the Si/SiO 2 interfaces of commercially available Si (001) wafers.…”
Section: Introductionmentioning
confidence: 99%
“…In our experiments, we detect the resonance frequencies of the nuclear spins of ionized arsenic donors As + making use of the Pauli blockade formed in weakly coupled spin pairs. These pairs form between the neutral donors As 0 with an electron spin S = 1/2 and the paramagnetic oxygen-vacancy complex (SL1) in monocrystalline silicon exhibiting S = 1 [14,15] [ Fig. 1 (a)].…”
mentioning
confidence: 99%
“…The samples used in this work are silicon with natural isotope composition which was implanted with As + ions, resulting in a maximum As concentration of about 7 × 10 19 cm −3 about 70 nm below the surface. The sam-arXiv:1503.00133v2 [quant-ph] 7 Apr 2016 ples were not annealed in order to preserve the defect centers created upon implantation [15], which leads to a low dopant activation ratio as confirmed by the observation of hyperfine-resolved ESR peaks. The samples were contacted with an interdigit structure, biased with typically 8 V and illuminated with a red (wavelength 635 nm) light-emitting diode.…”
mentioning
confidence: 99%
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“…The experiments were performed on [111]-and [110]-oriented Si samples that were implanted with As + ions and not annealed, conserving the implantation defects, which provides an efficient pair recombination process for electrically detected magnetic resonance (EDMR) [28][29][30]. The [111]-oriented sample was thinned and cemented to a sapphire substrate, which at low temperatures generates a compressive strain due to the different thermal extension coefficients of the materials [13].…”
mentioning
confidence: 99%