Electron Paramagnetic Resonance of Manganese in Gallium Arsenide

Almeleh, N.; Goldstein, B.

doi:10.1103/physrev.128.1568

Cited by 66 publications

(34 citation statements)

References 4 publications

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“…Covalency leads to a partial filling of the 4s orbital, and causes a decrease in the observed magnitudes of A ║ and A ⊥ . Our hyperfine values are very similar to the Mn 2+ values found in GaAs and GaP [37,38], thus verifying that the covalency in CdGeAs 2 is comparable to the covalency in GaAs and GaP. Figure 4 shows an ENDOR spectrum, from the M S = +3/2 manifold, that contains lines from nearby Cd and As neighbors.…”

Section: Originalsupporting

confidence: 78%

Electron paramagnetic resonance and electron‐nuclear double resonance study of Mn²⁺ ions in CdGeAs₂ crystals

Evans

Garces

DeMattei

et al. 2006

Physica Status Solidi (b)

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Electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) . The Mn2+ ions substitute for the Cd 2+ ions in this tetragonal chalcopyrite lattice, and form "deep" isoelectronic centers. Their g values and crystal-field parameters are g ║ = 2.0025, g ⊥ = 2.0011, D = 118.8 MHz, a + 2/3F = 18.4 MHz, and a = −0.3 MHz. The hyperfine and nuclear electric quadrupole parameters for the 55 Mn nucleus are A ║ = −154.94 MHz, A ⊥ = −155.69 MHz, and P = 0.622 MHz. Hyperfine parameters for one set of nearby Cd nuclei and two sets of nearby As nuclei were also determined using ENDOR. No evidence was found in these doped bulk crystals to suggest that Mn 4+ ions substitute for Ge 4+ ions.

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Section: Originalsupporting

confidence: 78%

Electron paramagnetic resonance and electron‐nuclear double resonance study of Mn²⁺ ions in CdGeAs₂ crystals

Evans

Garces

DeMattei

et al. 2006

Physica Status Solidi (b)

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“…Its ground state is a spin sextet 6A1 (S = 5/2, L = 0). The EPR spectra characteristic of A -(d5 ) were observed for GaP as well as for GaAst [33,34]. It seems therefore rather well established that for bulk GaAs manganese impurity occurs either as a neutral (d5 d-h) or ionized (d5 ) acceptor center.…”

Section: The Nature Of Mn Impuritymentioning

confidence: 92%

“…Manganese impurity in III-V compounds has been studied for a long time [32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48]. The present understanding of the situation can be summarized as follows: There are essentially three types of Mn centers in III-V compounds.…”

Section: The Nature Of Mn Impuritymentioning

confidence: 99%

Diluted Magnetic III-V Semiconductors

Twardowski

2000

Acta Phys. Pol. A

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During recent years diluted magnetic semiconductors based on III-V compounds have been of considerable interest. In this respect we review the basic properties of these materials, which are nearly exclusively Mn-based systems, such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn impurity. Different Mn centers are considered and experimental pieces of evidence suggesting the dominating role of Mn (d5 ) configuration are given. Then we analyze s, p -d exchange, together with resulting magnetooptical properties (in particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering observed in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering are presented. Finally we discuss transport properties and some selected problems of quantum structures based on III-V diluted magnetic semiconductors.

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“…23,24 Fedorych et al 24 found for their partially compensated LT-MBE Ga 1−x Mn x As samples with 10 −4 Ͻ x Ͻ 10 −3 a linear dependence of D 001 = ͑96.3x + 0.112͒ mT ϫ g B on x. An extrapolation of this behavior into the concentration range of our MOVPE-grown sample ͑x = 0.0027 from EPR͒ would predict D 001 Ϸ 0.37 mTϫ g B , which is substantially larger than ͉D 001 ͉ = 0.1 mTϫ g B determined by our simulation.…”

Section: Eprmentioning

confidence: 99%

Local structure of Mn in hydrogenatedGa1−xMnxAs

et al. 2008

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In this paper we investigate the incorporation of hydrogen in Ga 1−x Mn x As for samples with x Ϸ 0.005 grown by metal-organic vapor-phase epitaxy and with 0.03Ͻ x Ͻ 0.05 grown by low-temperature molecular-beam epitaxy. The anisotropic electron-paramagnetic-resonance ͑EPR͒ signal observed for the paramagnetic Ga 1−x Mn x As samples with x Ϸ 0.005 after hydrogenation is characteristic for Mn 2+ substitutional on the Ga site. Contributions of crystal fields to the EPR signal indicative of Mn-H complexes with H atoms near the Mn are negligibly small. The relative volume increase in a single Mn Ga -As atom pair upon hydrogenation ⌬V H / V Mn-As Ϸ 0.14Ϯ 0.07 as deduced from a comparison of the high-resolution x-ray diffraction 2⌰ / ⍀ scans of as-grown and hydrogenated samples with 0.03Ͻ x Ͻ 0.05 is expected for Mn-H complex formation. However, the accuracy of this measurement is not sufficient to draw unambiguous conclusions about the specific nature of the Mn-H configuration. Extended x-ray absorption fine-structure ͑EXAFS͒ analysis and x-ray absorption near-edge spectroscopy ͑XANES͒ on samples with 0.03Ͻ x Ͻ 0.05 show no indication for bondcentered Mn-H complexes as determined from a detailed comparison of the EXAFS Fourier transforms and the XANES spectra with the simulations. The overwhelming structural evidence of these techniques therefore points to comparatively large distances between the Mn and the H atoms at least in Ga 1−x Mn x As films with Mn concentrations above 0.005, which would be the case for either complexes with the hydrogen atom in the antibonding position or for compensation via isolated interstitial hydrogen.

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Electron Paramagnetic Resonance of Manganese in Gallium Arsenide

Cited by 66 publications

References 4 publications

Electron paramagnetic resonance and electron‐nuclear double resonance study of Mn²⁺ ions in CdGeAs₂ crystals

Electron paramagnetic resonance and electron‐nuclear double resonance study of Mn²⁺ ions in CdGeAs₂ crystals

Diluted Magnetic III-V Semiconductors

Local structure of Mn in hydrogenatedGa1−xMnxAs

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Electron Paramagnetic Resonance of Manganese in Gallium Arsenide

Cited by 66 publications

References 4 publications

Electron paramagnetic resonance and electron‐nuclear double resonance study of Mn2+ ions in CdGeAs2 crystals

Electron paramagnetic resonance and electron‐nuclear double resonance study of Mn2+ ions in CdGeAs2 crystals

Diluted Magnetic III-V Semiconductors

Local structure of Mn in hydrogenatedGa1−xMnxAs

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Electron paramagnetic resonance and electron‐nuclear double resonance study of Mn²⁺ ions in CdGeAs₂ crystals

Electron paramagnetic resonance and electron‐nuclear double resonance study of Mn²⁺ ions in CdGeAs₂ crystals