Electron paramagnetic resonance on iron-related centers in silicon

Müller, Sara; Tuynman, Gijs M.; Sieverts, Eric; Ammerlaan, C.A.J.

doi:10.1103/physrevb.25.25

Cited by 100 publications

(27 citation statements)

References 29 publications

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“…Interaction with the primary or secondary defects produced by irradiation are responsible for this reduction in the Fe i centre. Such a reduction has previously been observed by Muller et al [11] using electron irradiation. The primary radiation-induced defects with which Fe i could interact are the vacancy and silicon self-interstitial.…”

Section: Effects Of Irradiationsupporting

confidence: 75%

“…The annealing temperature has also been observed to depend on the boron concentration, varying from 350 to 275 • C with a variation in resistivity from 100 to 10 cm in float-zone silicon [13]. Radiation-enhanced diffusion of iron inferred from the EPR study of irradiated, Fe-doped silicon [11] may also contribute to the quantitative differences in our annealing data. The initial rise in the concentration and the observation of Fe i without minority-carrier injection have both been attributed to the activation of Fe i donor from some electrically inactive source (such as precipitates and clusters) during this early stage of annealing, followed by a reclustering at high temperatures [10].…”

Section: Effects Of Irradiationmentioning

confidence: 71%

“…The initial rise in the concentration and the observation of Fe i without minority-carrier injection have both been attributed to the activation of Fe i donor from some electrically inactive source (such as precipitates and clusters) during this early stage of annealing, followed by a reclustering at high temperatures [10]. Direct evidence for the formation of iron clusters following annealing of the irradiated sample has been provided by the EPR data of Muller et al [11].…”

Section: Effects Of Irradiationmentioning

confidence: 97%

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Young's Modulus Enhancement of Mesoporous Pure-Silica–Zeolite Low-Dielectric-Constant Films by Ultraviolet and Silylation Treatments

Yoshino¹,

Ohnuki²,

Hata³

et al. 2009

jjap

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Iron-induced deep levels have been studied in p-type silicon quenched from high temperatures, using deep-level transient spectroscopy. The interstitial iron donor and the iron-boron pair defect are observed and identified by a number of their characteristics including their mutual transformation. Our recent work revealed an interesting new property of the interstitial iron donor defect, namely its complete bleaching by the transition metals Ag, Au, Pt and Pd in samples which have received thermal treatment identical to the undoped samples. The study reported here was intended to investigate the relationship of this effect to the well known iron-boron complex defect known to act as a source of the interstitial iron defect by injection-induced dissociation in boron doped p-silicon. Our results show that both the iron-boron complex and the isolated interstitial iron defects disappear concurrently in our transition-metal-doped samples. Thus the bleaching of the iron interstitial in the presence of the transition metals used is found to be associated with the bleaching of this source rather than due to some unknown complex mechanism inhibiting the dissociation of these pairs in the presence of the transition metals. In addition, the response of the iron interstitial defect to irradiation with alpha-particles and its thermal annealing behaviour have been studied. Alpha-irradiation is seen to lead to a significant suppression of the iron interstitial defect, in agreement with the hitherto reported results of electron irradiation, without causing any significant change in its thermal annealing characteristics.

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Section: Effects Of Irradiationsupporting

confidence: 75%

Section: Effects Of Irradiationmentioning

confidence: 71%

Section: Effects Of Irradiationmentioning

confidence: 97%

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Young's Modulus Enhancement of Mesoporous Pure-Silica–Zeolite Low-Dielectric-Constant Films by Ultraviolet and Silylation Treatments

Yoshino¹,

Ohnuki²,

Hata³

et al. 2009

jjap

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“…The photoelectric conversion efficiency of solar cells has been seriously studied by scholars who are engaged in the field of photovoltaic. The metallicity impurity content has a significant effect on the photoelectric conversion efficiency of solar cells [7][8][9]. Iron impurity is one of the most common metallicity impurities in silicon [9,10], which can affect the minority carrier lifetime of solar cells [9,11,12].…”

Section: Introductionmentioning

confidence: 99%

“…(7) and Eq (8). in Section 2, the value of α` during silicon purification by directional solidification for iron impurity is affected by three factors: the total solidification length (L), the diffusion coefficient of the impurity in solid at melting point (D s ), and growth rate (v).…”

mentioning

confidence: 99%

Back diffusion of iron impurity during silicon purification by vacuum directional solidification

Wen

Jiang

et al. 2015

Vacuum

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Electronic structure and properties of MCO and M5CO carbonyls (M = Fe, Ni, Cu) by density functional methods

Sosa¹,

Gardiol

1996

Int. J. Quantum Chem.

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Density functional theory (DFT) calculations of the electronic structure and properties of Fe, Ni, and Cu carbonyls with one and five transition‐element atoms are reported, due to their importance in heterogeneous catalysis (especially in Fischer‐Tropsch synthesis). The local density approximation (LDA) with the Vosko‐Wilk‐Nussain (VWN) correlation functional as well as the generalized gradient approximation (GGA) using Becke's 1988 exchange functional and Perdew's 1986 correlation functional (BP method) were applied to the study of the clusters using a triple‐zeta plus polarization (TZP) basis set. Triplet and quintuplet states for FeCO, singlet and triplet for NiCO, and doublet for CuCO were considered, and optimization of energy at the LDA/BP level for these cases was done. Dissociation energies in M and CO fragments, frequencies, and population analysis were performed. Geometry optimization of the distance between the C atom and the clusters M5 (with geometries taken from the crystals) were carried out and the dissociation energy in fragments M5 and CO as well as population analysis at the optimized geometries were also done. Comparison between our results and some others published using ab initio and density functional methods were performed. © 1996 John Wiley & Sons, Inc.

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Electron paramagnetic resonance on iron-related centers in silicon

Cited by 100 publications

References 29 publications

Young's Modulus Enhancement of Mesoporous Pure-Silica–Zeolite Low-Dielectric-Constant Films by Ultraviolet and Silylation Treatments

Young's Modulus Enhancement of Mesoporous Pure-Silica–Zeolite Low-Dielectric-Constant Films by Ultraviolet and Silylation Treatments

Back diffusion of iron impurity during silicon purification by vacuum directional solidification

Electronic structure and properties of MCO and M5CO carbonyls (M = Fe, Ni, Cu) by density functional methods

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