Electron penetration and the atomic number correction in electron probe microanalysis

Abstract

The number of ionizations on a given j shell in any electron-bombarded target has been calculated analytically by means of the Bethe formulae. A general formula for the atomic number correction has been derived in the form of an equation using parameters that are functions of target composition and accelerating voltage. This equation allows the calculation of the penetration effect to be readily carried out. The electron range, in terms of beam energy, has also been calculated. Finally, it is shown that the correction is different in the case of thin-target analysis.

The parameterless correction method in X-ray microanalysis

“…The total intensity Ix of element X is given by the sum of (2) and (4) (11) and (12) it is clear that strictly speaking the extrapolated value of the uncorrected mass concentration ratio (11) is not equal to the exact ratio (12 It has been shown that for a perfect plane parallel foil the linear term of fluorescence emission equals zero (11 = 0) [5]. Hence If = fB = 0 so that from (11) and (12) it is clear that for T or Ix approaching zero (CA/CB)' == (CA/CB) without any assumption.…”

“…Hence If = fB = 0 so that from (11) and (12) it is clear that for T or Ix approaching zero (CA/CB)' == (CA/CB) without any assumption.…”

Fabrication of highly water-resistant AlN particles with hybrid α-Al₂O₃/organic layers

“…Table 2 lists the compositions of the detected elements quantitatively estimated using the EDX spectra with a ZAF (atomic number, absorption, and fluorescence) correction method. 25) It was revealed that the ¡-Al 2 O 3 layers were occupying most of the area and that the sintering aids and the organic layers were slightly apparent on the particle surfaces, which suggests the organic layers existed only in the cracks and channels, not on all of the particle surfaces. This may indicate that the stearic acid reacted only with the AlN under-layers, and not with the ¡-Al 2 O 3 layers, as we had previously speculated.…”

Cu-dependent phase transition in polycrystalline CuGaSe2 thin films grown by three-stage process

“…To take into account the surface roughness effect in our EPMA measurement, the composition data were corrected using the ZAF model. 21 This model considers atomic number (Z), absorption (A) and fluorescence (F) of the specimen to make correction of the EPMA data. In our study a two times iteration was used during the calculation that makes it ZAF2 correction model.…”