We analyze the heat power P between electrons and phonons in thin metallic films deposited on free-standing dielectric membranes in a temperature range in which the phonon gas has a quasi two-dimensional distribution. The quantization of the electrons wavenumbers in the direction perpendicular to the film surfaces lead to the formation of quasi two-dimensional electronic sub-bands. The electron-phonon coupling is treated in the deformation potential model and, if we denote by Te the electrons temperature and by T ph the phonons temperature, we find that P ≡ P (0) (Te) − P (1) (Te, T ph ); P (0) is the power "emitted" by the electron system to the phonons and P(1) is the power "absorbed" by the electrons from the phonons. Due to the quantization of the electronic states, P vs (d, Te) and P vs (d, T ph ) show very strong oscillations with d, forming sharp crests almost parallel to the temperature axes. In the valleys between the crests, P ∝ T 3.5 e − T 3.5 ph . From valley to crest, P increases by more than one order of magnitude and on the crests P does not have a simple power law dependence on temperature.The strong modulation of P with the thickness of the film may provide a way to control the electron-phonon heat power and the power dissipation in thin metallic films. Eventually the same mechanism may be used to detect small variations of d or surface contamination. On the other hand, the surface imperfections of the metallic films may make it difficult to observe the oscillations of P with d and eventually due to averaging the effects the heat flow would have a more smooth dependence on the thickness in real experiments.