Electron-phonon interactions in<i>n</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mn>0.53</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.47</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>As and<

Maslar, James E.; Dorsten, J. F.; Bohn, Paul W.; Agarwala, S.; Adesida, I.; Caneau, C.; Bhat, R.

doi:10.1103/physrevb.50.17143

Cited by 14 publications

(10 citation statements)

References 30 publications

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“…Previous authors have used Raman scattering to measure free carrier concentrations making use of the fact that LO phonons will readily couple with the plasma oscillations of free carriers in InAs and other polar, III-V materials. 13,14,[21][22][23][24][25][26][27] The L þ phonon-plasmon coupled mode is especially sensitive to changes in the carrier concentration at high n-type carrier concentrations in InAs where Raman shifts towards higher wavenumbers correspond to increasing free electron concentrations. Diffusion of Si in InAs beyond the initial implanted profile may increase the active sheet number measured by Hall effect precluding accurate carrier concentration estimates without corresponding Si diffusion data.…”

Section: Introductionmentioning

confidence: 99%

Activation of Si implants into InAs characterized by Raman scattering

Lind

Martin

Sorg

et al. 2016

Journal of Applied Physics

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Studies of implant activation in InAs have not been reported presumably because of challenges associated with junction leakage. The activation of 20 keV, Si þ implants into lightly doped (001) p-type bulk InAs performed at 100 C as a function of annealing time and temperature was measured via Raman scattering. Peak shift of the L þ coupled phonon-plasmon mode after annealing at 700 C shows that active n-type doping levels %5 Â 10 19 cm À3 are possible for ion implanted Si in InAs. These values are comparable to the highest reported active carrier concentrations of 8-12 Â 10 19 cm À3 for growth-doped n-InAs. Raman scattering is shown to be a viable, non-contact technique to measure active carrier concentration in instances where contact-based methods such as Hall effect produce erroneous measurements or junction leakage prevents the measurement of shallow n þ layers, which cannot be effectively isolated from the bulk. V C 2016 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Activation of Si implants into InAs characterized by Raman scattering

Lind

Martin

Sorg

et al. 2016

Journal of Applied Physics

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“…This indicates that free carrier density is unchanged over the depth probed by the Raman measurement and, therefore, that HBr RIE results in no carrier compensation to depths large relative to the Raman probe depth. 36 Decreases are observed in all phonon and coupled mode intensities in the spectra of the etched samples relative to that of the control, consistent with the creation of a disordered/oxidized layer at the surface. This indicates that the degree of near-surface electrical modification is also small.…”

Section: Hbr Etchedmentioning

confidence: 58%

Structural and electronic effects of argon sputtering and reactive ion etching on In0.53Ga0.47As and In0.52Al0.48As studied by inelastic light scattering

Maslar

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inRapid thermal annealing effects on step-graded InAlAs buffer layer and In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor structures on GaAs substrates Photocurrent spectroscopy and study of subband parameters for heavy holes in nanoscale In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multiquantum well structures Reactive ion etch-induced effects on 0.2 μm T-gate In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobility transistors J.High-field electron-transport properties in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure J. Appl. Phys. 69, 4003 (1991); 10.1063/1.348461 Two-dimensional electron gas density calculation in Ga0.47In0.53As/Al0.48In0.52As, Ga0.47In0.53As/InP, and Ga0.47In0.53As/InP/Al0.48In0.52As heterostructuresThe effects of Ar sputtering and HBr reactive ion etching on In 0.53 Ga 0.47 As and In 0.52 Al 0.48 As epitaxial layers were investigated by Raman spectroscopy. First-order phonon scattering was used as a probe of structural modification, while coupled phonon-plasmon mode scattering was used to investigate electrical modification. Second-order phonon scattering proved insensitive to sputterand etch-induced structural modification. For both In 0.53 Ga 0.47 As and In 0.52 Al 0.48 As, Ar sputtering leads to more structural modification than does HBr etching, the difference being greater for In 0.53 Ga 0.47 As. In 0.52 Al 0.48 As exhibits a greater resistance to sputter-induced structural damage than does In 0.53 Ga 0.47 As, and nominally undoped material displays less susceptibility to being disordered structurally than does more highly doped material for both In 0.53 Ga 0.47 As and In 0.52 Al 0.48 As. HBr etching results in no electrical modification of In 0.53 Ga 0.47 As, whereas a decrease in carrier density and/or an increase in plasmon damping is observed in In 0.52 Al 0.48 As. Annealing In 0.52 Al 0.48 As under conditions known to restore electrical activity of dopants in GaAs and Al 0.3 Ga 0.7 As results in no change in the coupled mode spectra, indicating that electrical modification is not due to hydrogen passivation of dopants.

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“…Just below 240 cm −1 is the InAs‐like LO scattering that must originate from the InGaAs, while GaAs‐like LO scattering appears around 280 cm −1 , in addition to the GaAs LO phonon around 290 cm −1 . Furthermore, a number of intermediate peaks and shoulders become visible that may be attributed either to alloy disorder modes or LO phonon‐plasmon coupled modes, but a precise assignment of all the modes would require information on the carrier densities inside the nanostructured fins . Finally, the location of the peaks will also depend on any stress inevitably present in the system, as well as on the composition of In and Ga, as will be discussed into more detail below.…”

Section: Nanofocusing In Other Materialsmentioning

confidence: 99%

Advanced Raman Spectroscopy Using Nanofocusing of Light

et al. 2017

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Raman spectroscopy is uniquely sensitive to crucial material properties like stress and composition, but is inherently diffraction-limited, impeding its application potential in nanostructured devices. Under correct polarization conditions, the Raman response from a periodic array of fins is dramatically enhanced inside the semiconductor material, re-enabling fast and non-destructive optical characterization of deep-subwavelength semiconductor patterns. In this paper, it is shown that the effect is not limited to the material system where it was first observed, and results of nanofocused Raman spectroscopy in a variety of semiconductor materials are presented. The authors illustrate and discuss how the universality of the enhancement creates a unique potential for non-invasive and rapid stress and composition measurements at the nanoscale.

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Electron-phonon interactions inn-typeIn0.53Ga0.47As and<

Cited by 14 publications

References 30 publications

Activation of Si implants into InAs characterized by Raman scattering

Activation of Si implants into InAs characterized by Raman scattering

Structural and electronic effects of argon sputtering and reactive ion etching on In0.53Ga0.47As and In0.52Al0.48As studied by inelastic light scattering

Advanced Raman Spectroscopy Using Nanofocusing of Light

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