Electron Processes in Solid State Heterostructures on the Basis of Indium Arsenide

Sysoev, B. I.; Bezryadin, N. N.; Budanov, A. V.; Prokopova, T. V.; Shlyk, Yu. K.

doi:10.1002/pssa.2211240116

Cited by 2 publications

(3 citation statements)

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“…The main condition for the formation of hetero‐junctions with a low density of interface states is the identity of crystal lattice parameters of the contacting layers. Lattice constants for Ga 2 Se 3 ( a 0 = 0.543072 nm) and for Si ( a 0 = 0.5430 nm) thus, predetermining the formation of heterojunctions with low density of interface states D s ≤ 1013/m 2 eV 11 . Because of the nearly perfect lattice match of Ga 2 Se 3 and Si, Ga 2 Se 3 can serve as a suitable material for use in silicon based technologies 16 .…”

Section: Introductionmentioning

confidence: 99%

“…Being a wide band gap semiconductor ( E g = 1.9 eV), it can be easily used in place of an insulator provided the thickness of the layer is less than the Debye length ~ 150 nm 11 . Dielectric constant of this material Ga 2 Se 3 is 7‐9 11 . However, for the thickness of the layer of the order of a few Angstroms, it has been taken to be unity for all practical purposes 15 .…”

Section: Introductionmentioning

confidence: 99%

“…Literature survey shows that a general study of the many such heterostructures has been made in the past Al ZnP 2 Si, Al In 2 S 3 InAs, Al In 2 Te 3 InAs, Al In 2x Ga 2(1Àx) Te 3 InAs, Al Ga 2 Se 3 GaAs, Al Ga 2 Se 3 Si. [7][8][9][10] Compound semiconductor Ga 2 Se 3 has been reported to find its application in fabrication of basic structure of metal-oxide-semiconductor field-effect transistors (MOSFET) and photovoltaic device 11 on Silicon. Some of the scientists have investigated the electrical and optical properties of Ga 2 Se 3 bulk crystals.…”

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Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

2022

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Many studies have been conducted in the past on compound semiconductor and wide-gap semiconductor for their possible usage in place of oxide in metal-oxidesemiconductor structures for high-speed metal-oxide-semiconductor field-effect transistors application. The best candidates for this purpose, however, are compounds with stoichiometric vacant A III 2 B VI 3 type sites. A III 2 B VI 3 type compounds are wide-gap semiconductors with stoichiometric vacancies and low concentration of free and localized charged carriers. It has that gate insulators can be constructed from wide-gap semiconductor layers with thicknesses smaller than the Debye Screening distance. These new MS'S (metal-Wide bandgap semiconductor-semiconductor) with a good lattice match have less of interface states thus giving better stability to the structure. The idea was to use these MS'S structures for photovoltaic applications with insignificant number of interface states. During literature survey, it was also found that Ga 2 Se 3 is the most prospective candidate for forming a heterostructure with Silicon because of its various properties. Structurally, perfect and homogeneous in thickness Ga 2 Se 3 layers have already been formed in quasi-closed volume by the Hot Wall technique by B. I. Sysoev in the Voronezh Technological Institute, Russia. However, this technology is not cost-efficient for photovoltaic applications, although it has the advantage of better control of Ga and Se components. Over the last few years, many attempts have been made using many other techniques such as Sol-gel technique, vapour phase epitaxy, molecular beam epitaxy, etc. for preparing the thin film of GaSe. The current work is an attempt to prepare the Ga 2 Se 3 film using the electron beam evaporation technique as it appeared to be much simpler. Film of thicknesses varying from 70 to 1000 Å were grown. The films have been studied for their morphology and properties for future use in photovoltaics and other device fabrication like IR detectors, etc. Various techniques were used to study the behavior of the films like XRD, SEM, and TEM.

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confidence: 99%

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confidence: 99%

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Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

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X-ray electron probe microanalysis of the reaction zone of thermally stimulated heterovalent anion substitution in the Ga 2 III Se 3 VI -GaAs solid-phase system

Budanov¹,

Agapov

Boldyreva³

et al. 2012

J. Synch. Investig.

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Electron Processes in Solid State Heterostructures on the Basis of Indium Arsenide

Cited by 2 publications

References 5 publications

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

X-ray electron probe microanalysis of the reaction zone of thermally stimulated heterovalent anion substitution in the Ga 2 III Se 3 VI -GaAs solid-phase system

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Electron Processes in Solid State Heterostructures on the Basis of Indium Arsenide

Cited by 2 publications

References 5 publications

Characterization of thin films of Ga2Se3 on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga2Se3 on Si fabricated using electron beam evaporation technique

X-ray electron probe microanalysis of the reaction zone of thermally stimulated heterovalent anion substitution in the Ga 2 III Se 3 VI -GaAs solid-phase system

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Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique