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The distribution of the main components of compounds in In2S3InAs heterostructure interface region is investigated with the help of X‐ray electron probe microanalysis. By the substitution of arsenic for sulphur In2S3 layers were formed in the nearsurface region of indium arsenide. A transition region (S') is proved to exist in the heterosystem. The peculiarities of the voltage‐capacitance characteristics are explained in the frameworks of a MIS structure model as due to the participation of the free charge carriers in the S'‐layer in the screening of the external electric field. The possibility of evaluation of the transition region parameters in heterostructures by C–U characteristics is shown.

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By the methods of current—voltage and voltage—capacity characteristics, and by the difference in potentials on the contact the electro‐physical properties of heterostructures on the basis of indium arsenide with the layers of In2S3 and In1.3Ga0.7Te3 are studied. Monocrystal In2S3 layers are formed by the method of heterovalent substitution of arsenic by sulphur in indium arsenide, whereas In1.3Ga0.7Te3 layers are prepared by the “hot wall” method during coevaporation of components in quasi‐closed volume. It is shown that the level of electron enrichment of the near surface region of InAs is lowered in the investigated structures, and In2S3 and In1.3Ga0.7Te3 layers exhibit insulator properties. The mechanisms of current flow in In2S3 and In1.3Ga0.7Te3 layers are discussed.

A comparative analysis of different GaAs surface treatment effects onto the Schottky barrier height in Al/n‐GaAs (100) structures by electrical measurements of current—voltage (I‐U) and capacitance‐voltage (C‐U) characteristics is presented. Treatment in selenium vapour leads to a decrease of the electron density of states (EDS). The effect of technological conditions (temperature, process duration) of GaAs treatment in selenium vapour onto φbn and the composition of GaAs surface which was controlled by Auger electron spectroscopy method (AES) is investigated. The obtained data allowed to conclude that the changes in φbn are determined by the deviation of the composition from the stoichiometric one at the GaAs interface. Eine vergleichende Analyse der Effekte verschiedener Oberflächenbehandlungen auf die Schottky‐Barrierenhöhe von Al/n‐GaAs (100) Strukturen aus Strom—Spannungs‐ und Kapazitäts—Spannungs‐Charakteristiken wird präsentiert. Behandlung in Se‐Dampf verringert die Elektronenzustandsdichte. Der Einfluß der technologischen Bedingungen der Behandlung des GaAs in Se‐Dampf (Temperatur, Prozeßdauer) auf φbn und die Zusammensetzung der GaAs‐Oberfläche, die mittels Augerelektronen‐spektroskopie kontrolliert wird, wird untersucht. Die Ergebnisse lassen den Schluß zu, daß die Änderungen von φbn durch Abweichungen von der stöchiometrischen Zusammensetzung der GaAs‐Oberfläche bestimmt werden.