Heterostructures on the basis of indium arsenide with semi-insulating A2IIIB3VI compound layers

Abstract

By the methods of current—voltage and voltage—capacity characteristics, and by the difference in potentials on the contact the electro‐physical properties of heterostructures on the basis of indium arsenide with the layers of In2S3 and In1.3Ga0.7Te3 are studied. Monocrystal In2S3 layers are formed by the method of heterovalent substitution of arsenic by sulphur in indium arsenide, whereas In1.3Ga0.7Te3 layers are prepared by the “hot wall” method during coevaporation of components in quasi‐closed volume. It is shown that the level of electron enrichment of the near surface region of InAs is lowered in the investigated structures, and In2S3 and In1.3Ga0.7Te3 layers exhibit insulator properties. The mechanisms of current flow in In2S3 and In1.3Ga0.7Te3 layers are discussed.

Characterization of thin films of Ga2Se3 on Si fabricated using electron beam evaporation technique

“…Many researchers have shown interest in group III 2 ‐VI 3 compound semiconductors as they are found to be important in photo‐voltaic device formation and possible usage in electro‐thermal devices 1‐5 . It is shown 6‐8 that wide‐gap semiconducting layers with thicknesses less than the Debye screening length can be used as subgate insulators in MIS‐type structures. For this purpose, the best candidates are compounds with stoichiometric vacant A 2 III B 3 VI type sites 9 .…”

“…Literature survey shows that a general study of the many such heterostructures has been made in the past Al ZnP 2 Si, Al In 2 S 3 InAs, Al In 2 Te 3 InAs, Al In 2x Ga 2(1Àx) Te 3 InAs, Al Ga 2 Se 3 GaAs, Al Ga 2 Se 3 Si. [7][8][9][10] Compound semiconductor Ga 2 Se 3 has been reported to find its application in fabrication of basic structure of metal-oxide-semiconductor field-effect transistors (MOSFET) and photovoltaic device 11 on Silicon. Some of the scientists have investigated the electrical and optical properties of Ga 2 Se 3 bulk crystals.…”