Electron-pumped high-efficiency semiconductor laser

Abstract

We report on an efficient semiconductor laser array pumped by a high-energy electron gun. A peak power of 350 kW in a 4-ns pulse has been measured from a 25-mm2 CdS laser. For the materials studied (CdS, ZnxCd1−xS, and ZnSxSe1−x), laser action has been obtained in the blue-green region of the spectrum.

A Complex for Diagnostics of Laser Radiation of Semiconductor Targets Excited by a High-Frequency-Modulated Electron Beam

“…Reflecting coatings that formed an optical resonator were deposited on the film planes: a metal coating from the side of the EB and a multilayer dielectric coating on the opposite side. The semiconductor target was manufactured according to the technology corresponding to the conditions for high-efficiency lasing [14,15]. The diameter of the electron spot on the ST was 0.75 mm.…”

The structural properties of the liquid CdTe based on Reverse Monte Carlo modelling

“…The study of binary compounds based on II-VI semiconductors has attracted considerable interest due to its many potentials in a wide range of optoelectronic devices [1][2][3]. Among II-VI semiconductors, cadmium telluride is of special technological interest.…”

STRUCTURAL ANALYSIS AND LIFETIME DISTRIBUTION OF ELECTRIC CARRIERS IN CdSe EPITAXIAL LAYERS

“…[1][2][3][4] Epitaxial layers of photoconducting CdSe reveal photosensitivity of the order of 10 9 -10 11 Ω. These layers have the high sensitivity response in the visible range (400-800 nm) matching well with the human eye.…”