Electron scattering by structural defects in InSb quantum wells: Analysis with simplified Mayadas-Shatzkes equation

Abstract

The scattering of transport electrons in InSb quantum wells (QWs) caused by two types of structural defects, micro-twins (MTs) and threading dislocations (TDs), has been investigated at room temperature. The electron scattering due to a MT is explained by its energy barrier with a height of ∼0.087 eV or its reflection with a coefficient of ∼0.33. The electric charge of a TD is 1.7 × 10−10 C/m along the [001] direction which is perpendicular to the InSb QWs examined in this study, under the assumption that the electron scattering due to a TD is fully attributed to its electric field. The electron scattering efficiency of one TD line in InSb QWs is equivalent to that of MT plates with a total length of 75 nm. In the course of this study, a mathematical simplification was made for Mayadas-Shatzkes equation which is one of the most frequently used equations to analyze carrier scattering due to a planar defect.

Regression Analysis for Transport Electron Scattering Caused by Structural Defects in InSb Quantum Wells: Application of Matthiessen's Formula

“…15,18) A regression analysis was performed with a statistical software package R. 29) Detailed descriptions of InSb QW structures and experimental conditions can be found elsewhere. 4,13) 3. Matthiessen's Formula and Its Linear Regression Analysis…”

“…[5][6][7][8][9][10][11] These defects degrade the total electron mobilities in InSb QWs. 4,12,13) Based on regression analyses for Matthiessen's law, recently we have reported quantitative studies for electron scattering due to both TD and MT defects in InSb QWs, 12,13) although the effect of these defects on electron transport in InSb epilayers [14][15][16][17][18][19] and non-InSb two-dimensional (2D) systems [20][21][22][23][24][25] which include QW structures has long been investigated. By using the results of a regression analysis, the energy barrier height and reflection coefficient were deduced to be $0:087 eV and $0:33, respectively, for the room-temperature electron scattering due to a MT in 20-nmthick InSb QWs.…”

“…By using the results of a regression analysis, the energy barrier height and reflection coefficient were deduced to be $0:087 eV and $0:33, respectively, for the room-temperature electron scattering due to a MT in 20-nmthick InSb QWs. 13) Under the assumption that the electron scattering due to a TD is fully attributed to its electric field, the electric charge of a TD is 1:7 Â 10 À10 C/m along the [001] direction which is perpendicular to the InSb QWs. 13) The mobility limits due to the TDs and MTs estimated based on a regression analysis were plotted by using their ''percentage impacts'', which clearly show their individual contributions upon the total electron mobility in the InSb QWs.…”

“…13) Under the assumption that the electron scattering due to a TD is fully attributed to its electric field, the electric charge of a TD is 1:7 Â 10 À10 C/m along the [001] direction which is perpendicular to the InSb QWs. 13) The mobility limits due to the TDs and MTs estimated based on a regression analysis were plotted by using their ''percentage impacts'', which clearly show their individual contributions upon the total electron mobility in the InSb QWs. 12) In this paper, we expand our previous discussion 12,13) about a regression analysis for the electron scattering due to MTs and TDs in InSb QWs at room temperature.…”

“…13) The mobility limits due to the TDs and MTs estimated based on a regression analysis were plotted by using their ''percentage impacts'', which clearly show their individual contributions upon the total electron mobility in the InSb QWs. 12) In this paper, we expand our previous discussion 12,13) about a regression analysis for the electron scattering due to MTs and TDs in InSb QWs at room temperature. This time we focus on the graphical representation and the numerical interpretation of the direct results (defect coefficients: A defect ) obtained by a regression analysis.…”